Fabrication of MIS photodetector with Ge nanocrystals grown by MBE

Enhancing Short-Wave Infrared Photosensitivity of SiGe Nanocrystals-Based Films through Embedding Matrix-Induced Passivation, Stress, and Nanocrystallization

“…93 In contrast, there is a relatively high number of reports related to Ge QDs/NCs/NPs in dielectrics for photodetectors (including optical sensors). 17, 20,21,38,39,45,50,63,64,72,73,83,84 Remarkable effects and performance (e.g., IQE, R λ , time response, D*) in VIS-NIR photodetection/photosensing and limitations of Ge QDs/ NCs/NP-based photodetectors are reviewed in section 4, and a performance summary of selected reports is provided in Table S1. The mechanism of photoconductive gain activated by QDs (leading to IQE > 100%) is discussed in subsection 2.2 and S1 and S2) for similar photoactive film thickness.…”

“…Extensive research has been done on Ge NCs/QDs/NPs embedded in dielectric matrices (SiO 2 , TiO 2 , HfO 2 , Al 2 O 3 , Si 3 N 4 ). These nanomaterials are obtained by many deposition methods such as magnetron sputtering, ,,,,, chemical vapor deposition, ,, Ge ion implantation, − sol–gel deposition, , and molecular beam epitaxy …”

“…Our group developed exhaustive research in this field, evidencing the high VIS-SWIR photosensing performance ,, (section ) and the efficiency of SiGe NCs optical sensors in detecting slippery road conditions at RT with direct application to road safety monitoring and drivers warning (discussed below) . In contrast, there is a relatively high number of reports related to Ge QDs/NCs/NPs in dielectrics for photodetectors (including optical sensors). ,,,,,,,,,,,, Remarkable effects and performance (e.g., IQE, R λ , time response, D *) in VIS-NIR photodetection/photosensing and limitations of Ge QDs/NCs/NP-based photodetectors are reviewed in section , and a performance summary of selected reports is provided in Table S1. The mechanism of photoconductive gain activated by QDs (leading to IQE > 100%) is discussed in subsection and section .…”

“…These nanomaterials are obtained by many deposition methods such as magnetron sputtering, 21,38,43,61,75,76 chemical vapor deposition, 20,25,77 Ge ion implantation, 78−80 sol−gel deposition, 81,82 and molecular beam epitaxy. 83 Ge has a large Bohr radius (∼24 nm) in comparison to Si (∼4 nm) and it benefits the more convenient and cheaper fabrication of larger NCs/NPs based on Ge. Also, it allows a much broader NCs/NP size range for tuning in a more versatile way the energy bandgap and obtaining the targeted properties.…”

Annealing Effects on the Charging–Discharging Mechanism in Trilayer Al2O3/Ge/Al2O3Memory Structures

“…In the past decade, amorphous or crystalline germanium nanoparticles (Ge-NPs)-based nanostructures have been extensively studied on the one hand due to their interestingly fundamental properties − and on another hand for potential applications like photonic applications, , optoelectronics, photovoltaics and near-IR detectors, − lithium-ion batteries, , neuromorphic engineering, or memory devices. , This extensive attention is especially due to Ge-NP intrinsic properties compared to Si NPs as those of larger dielectric constant, smaller bulk band gap (Ge = 0.66 eV against Si = 1.1 eV), , larger Bohr exciton radius (Ge = 24.3 nm against Si = 4.5 nm), higher electron and hole mobility, and larger absorption coefficient (tuneable light emission and detection in a wider spectral range). Additionally, the Ge-NPs represent an ideal candidate for use as charge-storing nodes in memory devices. − Most current Ge-NP-based memory devices use SiO 2 as tunnel and/or gate oxide, respectively. , The device’s downscaling is slowed down by SiO 2 limitations .…”