Fabrication of n-MgZnO/p-Si heterojunction diode: Role of magnesium doping

Mohammed, Yasir Hussein

doi:10.1016/j.spmi.2019.06.001

Cited by 18 publications

(16 citation statements)

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“…Also, the electrical behaviours of ZnO diodes were signicantly enhanced by the incorporation of Mg 2+ into ZnO with a high rectifying ratio and low dark current. 30 Similarly rectifying nature was observed in Mn doped ZnO prepared on silicon substrates, 31 and has emission in the blue wavelength region. 24,26 Therefore, with the Mg dopant covering green to red emission, and Mn dopant covering the blue regime of the visible spectrum, the suitable mixture of the two dopants is expected to give a color coordinate more towards 0.33 when compared to the reported color coordinates of ZnO thin lms, (0.155, 0.032).…”

Section: Introductionmentioning

confidence: 63%

(Mg,Mn)-dual doping synergism towards luminescence and electrical properties of ZnO/p-Si heterojunction diodes

V. S.,

M. G.

2023

RSC Adv.

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Section: Introductionmentioning

confidence: 63%

(Mg,Mn)-dual doping synergism towards luminescence and electrical properties of ZnO/p-Si heterojunction diodes

V. S.,

M. G.

2023

RSC Adv.

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“…The extracted parameters of the AZO/p-Si heterojunction were compared with the results reported in the literature, as exposed in Table I. The values of R s for our heterojunction are smaller than the values reported by [54,[56][57][58][59]64] and higher for the others. However, barrier heights (Φ b ) and ideality factors (n) are in agreement with the reported values.…”

Section: Electrical Propertiesmentioning

confidence: 82%

“…The intercepts of the slope and the yaxis are used to calculate R s . These values are listed in Table I [52,54,[56][57][58][59][60][61][62][63][64]. The following Cheung's equations [55] provide the function H as a function of current (I), which may be plotted to determine Φ b and R s…”

Section: Electrical Propertiesmentioning

confidence: 99%

Electrical and Optical Properties of ZnO:Al/p-Si Heterojunction Diodes

Bouacheria,

Djelloul,

Benharrat

et al. 2024

Acta Phys. Pol. A

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The study examines the optical and electrical characteristics of n-ZnO:Al (AZO) thin films that were deposited on p-Si using the sol-gel dip-coating process, with thicknesses ranging from three to six cycles. The I-V characteristics of the diode device exhibited a high and low current under forward and reverse bias, respectively. The ideality factors were found to decrease from 2.78 to 2.13 with an increase in the number of layers from 3C to 6C. However, it was revealed that the barrier height increased from 0.72 to 0.79 eV. Similarly, the rectification ratio increased from 3196 at ±4 V to 5253 at ±4 V with an increase in the thickness of the emitter layer. Some diode parameters were calculated according to the thermionic and Chueng models and found to be in a range comparable to the literature. The optical study based on photoluminescence under UV excitation showed typical emission spectra of n-AZO/-Si heterostructure characterized by a high emission band around 389 nm, which is due to the recombination of excitons (e − /h + ). The various intrinsic defects present in ZnO-doped Al thin films are attributed to the broad emission band in the visible range. The chromaticity study with color properties indicated that the correlated color temperature value of the sample 3C (1380 K) falls in the warm white light region. However, the correlated color temperature value of sample 6C (4454 K) is located in the cool white light source region, which is more suitable as an LED lighting source. It was found that by increasing the emitter layer thickness, the correlated color temperature value of the 6C sample is getting closer to 6504 K -the Commission Internationale de l'Eclairage (CIE) standard for daylight (D65). However, unlike the Duv value of the 6C sample (0.011), the one of the 3C sample (0.0032) is located within the acceptable shift range (±0.006). Based on this study, these heterostructures might be an appealing option for manufacturing W-LEDs with n-UV/blue LED chips as the excitation source for use in displays and lighting.

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“…These substrates were deposited for 20 min at temperature of 500 C, by APCVD technique. Further, the experimental details can be found elsewhere (Mohammed, 2019). The asgrown ZnO thin films were light rainbow in appearance.…”

Section: Experiments Setupmentioning

confidence: 97%

Nonlinear Optical Properties of ZnO Thin Film at Low Laser Intensity Using Z-Scan Technique

Sony¹,

Zaker²,

Zakar³

et al. 2021

RJS

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In this work, a highly sensitive well-known z-scan technique was employed to study the nonlinear optical properties of Zinc Oxide thin films as a function of low laser fluencies. The transmissions of the continues-wave red laser diode with wavelength of (650 nm) were measured from the ZnO thin film sample with thickness of ( 425 nm). The thin film used in this study was deposited on the glass substrates based on atmospheric pressure chemical vapor deposition (APCVD) technique. The measurements were obtained at low laser powers ranging from (1.9-2.5) mW. The results indicated that the nonlinear absorption coefficient, refractive index and the third-order nonlinear optical susceptibility increase with increasing the laser intensity. The obtained curves of the closed aperture showed a positive sign of the nonlinear refractive index which in turn attributed to the selfdefocusing of the material. The optical parameters obtained in this work are relatively comparable with that obtained elsewhere. The results also confirm the reliability of the z-scan approach even at low laser intensities.

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Fabrication of n-MgZnO/p-Si heterojunction diode: Role of magnesium doping

Cited by 18 publications

References 50 publications

(Mg,Mn)-dual doping synergism towards luminescence and electrical properties of ZnO/p-Si heterojunction diodes

(Mg,Mn)-dual doping synergism towards luminescence and electrical properties of ZnO/p-Si heterojunction diodes

Electrical and Optical Properties of ZnO:Al/p-Si Heterojunction Diodes

Nonlinear Optical Properties of ZnO Thin Film at Low Laser Intensity Using Z-Scan Technique

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