Fabrication of nanostructures using a C-methylcalix[4]resorcinarene dielectric spacer

Abstract

Application of double patterning technology to fabricate optical elements: Process simulation, fabrication, and measurement J. Vac. Sci. Technol. B 30, 031605 (2012); 10.1116/1.3698315 Imaging classical and quantum structures in an open quantum dot using scanning gate microscopy

A tunable three-lead double quantum dot with a resorcinarene spacer

“…When a negative voltage is applied to the gates, the pattern is electrostatically 0268-1242/09/025010+05$30.00 transferred into the 2DEG, while the area below the spacer is either fully screened or forms a homogeneous tunnelling barrier. As shown before, calixarene and resorcinarene derivatives are highly suitable dielectric spacer materials [16]. C-methylcalix [4]resorcinarene in particular exhibits high resolution, good adhesion to the substrate and gates, stability under subsequent processing steps and a low dielectric constant 3.7.…”

“…In the present approach, nanostructures are fabricated using electron beam lithography to pattern a dielectric spacer layer. In a second electron beam exposure, the spacer layer is overlaid by continuous metallic gates [16]. When a negative voltage is applied to the gates, the pattern is electrostatically 0268-1242/09/025010+05$30.00 transferred into the 2DEG, while the area below the spacer is either fully screened or forms a homogeneous tunnelling barrier.…”

Scanning proximal probe lithography for sub-10 nm resolution on calix[4]resorcinarene

“…33,[39][40][41][42] In our SPPL setup the Fowler-Nordheim electron emission [picoampere (pA) regime] driven by the high, nonuniform electric field (approximately 10 9 V=m) at the tip apex causes highresolution self-development (in situ removal) of the C-MC4R resist material underneath the nanoprobe in a positive-tone. 33,[39][40][41][42] In our SPPL setup the Fowler-Nordheim electron emission [picoampere (pA) regime] driven by the high, nonuniform electric field (approximately 10 9 V=m) at the tip apex causes highresolution self-development (in situ removal) of the C-MC4R resist material underneath the nanoprobe in a positive-tone.…”

“…Fujita et al 40,41 and Ohnishi et al 33 demonstrated that calixarenes can act as a high-resolution negative-tone nonpolymeric resist material in EBL. [39][40][41] To make these resist systems more useful, a technique must be utilized that can (1) overcome the low sensitivities to energetic electron beams 33,35,40,41 and (2) circumvent the additional resolution-limiting problems. Calixarenes have high chemical and thermal stability and can form extremely hard 33 and flat surfaces.…”