Fabrication of nitrogen-doped ZnO nanorod arrays by hydrothermal synthesis and ambient annealing

Kobayashi, Ryosuke; Kishi, Takuya; Katayanagi, Yuta; Yano, Tetsuji; Matsushita, Nobuhiro

doi:10.1039/c8ra04168g

Cited by 19 publications

(10 citation statements)

References 48 publications

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“…In the present work, a clear decrease of the intensity has been observed above 400°C annealing (Figure b, inset). This is consistent with report by earlier studies on the similar system . Also, the peak positions are shifting towards the value that has been observed for N1E16 sample (Figure b) with annealing temperature above 200°C.…”

Section: Resultssupporting

confidence: 93%

“…Several researchers claim that this peak occurs due to native defects like I Zn or I Zn clusters ruling out any possible contribution of N . Other groups, however, favor a possible role of N atoms, mostly I Zn –N O ‐type defects, for the appearance of 275 cm −1 Raman mode in ZnO . In the present work, a clear decrease of the intensity has been observed above 400°C annealing (Figure b, inset).…”

Section: Resultssupporting

confidence: 45%

“…Interplay of defects and dopants in semiconductors is very much interesting to explore theoretically as well as for technological purposes . Being a promising optoelectronic material, focused research on ZnO in this direction is going on since the last two decades . Still, the dopant defect combination (in requisite concentration) that can lead to stable p‐type conductivity in ZnO, has not been identified/realized yet.…”

Section: Introductionmentioning

confidence: 99%

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Raman investigation of N‐implanted ZnO: Defects, disorder and recovery

Mondal

Pal

Sarkar³

et al. 2019

J Raman Spectroscopy

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Understanding defects, disorder and doping due to N implantation in ZnO is one of the most debated issues for the last few years. In the present work, a comprehensive investigation has been carried out using Raman, photoluminescence (PL) spectroscopy and grazing‐incidence X‐ray diffraction on 50 keV N ions implanted granular ZnO with different fluence (approximately up to 6.5% atomic concentration) along with postimplantation annealing. Raman investigation suggests that 275, 510, 643, and 857 cm−1 modes are directly related to nitrogen. Additionally, VZn may have some role in stabilizing 275 cm−1 mode. The broadening (or tailing) of E2low mode is related to vibration of distorted Zn sublattice, which may be a product of ion implantation generated defect cluster like VZn–VO. The distortion starts to reduce with annealing at elevated temperatures. Direct correlation between 555 cm−1 Raman mode and the tailing of E2low mode has been found. More defect clustering is vivid from the reduced PL of the ZnO samples with increasing implantation fluence. So, tailing of E2low Raman mode, increasing intensity of 555 cm−1 mode and nonradiative defect centers are of common origin. Both the ratios E1(2LO)/E1(LO) and E2high/E1(LO) can be used as parameters to measure the defective nature of ZnO after ion implantation/irradiation. Low temperature PL (selected samples) suggests absence of shallow acceptor states, although negative thermal quenching above 175 K has been observed (implantation fluence 1 × 1016 ions/cm2 and annealed at 500°C) which can be a signature of deep acceptors.

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Section: Resultssupporting

confidence: 93%

Section: Resultssupporting

confidence: 45%

Section: Introductionmentioning

confidence: 99%

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Raman investigation of N‐implanted ZnO: Defects, disorder and recovery

Mondal

Pal

Sarkar³

et al. 2019

J Raman Spectroscopy

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“…Following thermal annealing at 500 °C, the activation and generation of (V Zn -N O -H) defect complex with the -2 charge state is revealed through the formation of V Zn at high temperatures (5a) and its reaction with the N O -H groups (5b). The broadening of the NBE emission in the CL spectrum along with the sharp increase in the relative intensity of the green-blue emission band are strong evidences [69,76,102].…”

Section: F Effects Of Thermal Annealing On Nitrogen-and Hydrogen-related Defectsmentioning

confidence: 90%

Engineering nitrogen- and hydrogen-related defects in ZnO nanowires using thermal annealing

Villafuerte

Chaix‐Pluchery

Kioseoglou

et al. 2021

Phys. Rev. Materials

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The chemical bath deposition (CBD) of ZnO nanowires is of high interest, but their formation occurs in a growth medium containing a large number of impurities including carbon, nitrogen, and hydrogen, rendering the accurate determination of predominant crystal defects as highly debated. In addition to the typical interstitial hydrogen in bond-centered sites (H BC ) and zinc vacancy -hydrogen (V Zn -nH) complexes, we reveal that the nitrogen-related defects play a significant role on the physical properties of unintentionally-doped ZnO nanowires. In particular, we show by density-functional theory that the (V Zn -N O -H) defect complex acts as a deep acceptor with a relatively low formation energy and exhibits a prominent Raman line at 3078 cm -1 along with a red-orange emission energy of around 1.82 eV in cathodoluminescence spectroscopy. The nature and concentration of the nitrogen-and hydrogen-related defects are found to be tunable using thermal annealing under oxygen atmosphere, but a rather complex, fine evolution including successive formation and dissociation processes is highlighted as a function of annealing temperature. ZnO nanowires annealed at the moderate temperature of 300 °C specifically exhibit one of the smallest free charge carrier density of 5.6 x 10 17 cm -3 along with a high mobility of about 60 cm 2 /V s following the analysis of longitudinal optical phonon -plasmon coupling. These findings report a comprehensive diagram showing the complex interplay of each nitrogen-and

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“…71 In parallel, the synthesis of nanostructured polycrystalline N-ZnO materials has also been described 72 whose interest, like in the case of N-TiO 2 , is related to the search for photoactive systems working in visible light in particular for the water splitting reaction. 73 Polycrystalline ZnO have been doped following classic wet chemistry process using a solution of ammonium carbonate followed by an annealing at 750 C. In Fig. 7 EPR spectra (and related computer simulation, dash-dotted trace) of N-B co-doped titanium dioxide.…”

Section: N Doping Of Zinc Oxidementioning

confidence: 99%

Nitrogen-doped semiconducting oxides. Implications on photochemical, photocatalytic and electronic properties derived from EPR spectroscopy

et al. 2020

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Fabrication of nitrogen-doped ZnO nanorod arrays by hydrothermal synthesis and ambient annealing

Abstract: Nitrogen-doped ZnO nanorod arrays were fabricated by hydrothermal synthesis using a zinc–ammine complex solution, followed by annealing under ambient conditions.

Cited by 19 publications

References 48 publications

Raman investigation of N‐implanted ZnO: Defects, disorder and recovery

Raman investigation of N‐implanted ZnO: Defects, disorder and recovery

Engineering nitrogen- and hydrogen-related defects in ZnO nanowires using thermal annealing

Nitrogen-doped semiconducting oxides. Implications on photochemical, photocatalytic and electronic properties derived from EPR spectroscopy

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