Fabrication of one‐dimensional Zn‐doped Bi₂S₃ nanorods for photodiode applications

Abstract

In this research, the impact of the different zinc (Zn) concentrations on the physical and optoelectronic properties of Bi2S3 nanorods as self‐powered and photodiode applications was investigated. The performance of P‐N junction photodiodes has been for decades since they are crucial in energy applications. The structure, degree of crystallinity, and shape of Zn‐doped Bi2S3 nanorods of various doping percentages formed onto the indium tin oxide (ITO) substrates by the dip coating technique are investigated using X‐ray powder diffraction (XRD) and SEM. With increasing illumination time, the current–voltage (I–V) graphs demonstrate a rise in photocurrent. The diode's idealist factor was estimated using the I–V technique under 30 min of light illumination.