Fabrication of ordered arrays of silicon cones by optical diffraction in ultrafast laser etching with SF6

Riedel, Damien; Hernández‐Pozos, José Luis; Palmer, Richard E.; Kołasiński, Kurt W.

doi:10.1007/s00339-002-1938-y

Cited by 44 publications

(39 citation statements)

References 23 publications

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“…We have for the first time demonstrated ultrafast laser induced pillar formation in Ge using SF 6 and HCl gaseous environments. We have also demonstrated that ultrafast laser induced pillar formation is not limited to SF 6 but other gases such as HCl can be used.…”

Section: Resultsmentioning

confidence: 96%

“…Surface texturing by porosification of silicon has been extensively studied over decades and recently ultrafast laserassisted surface texturing [1][2][3][4][5][6][7][8] has become progressively more popular due to several advantages: (1) unlike porous structures, regular sharp pillars can be formed in which the entire surface area is exposed as exterior surface, (2) the structural, optical and electronic properties can be well tailored by controlling the processing conditions, and (3) large area samples can be processed with automation. Nonetheless, the formation of regular conical pillars has only been demonstrated previously in silicon.…”

Section: Introductionmentioning

confidence: 99%

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Ultrafast-laser-assisted chemical restructuring of silicon and germanium surfaces

Nayak

Gupta

Kołasiński

2007

Applied Surface Science

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Section: Resultsmentioning

confidence: 96%

Section: Introductionmentioning

confidence: 99%

Ultrafast-laser-assisted chemical restructuring of silicon and germanium surfaces

Nayak

Gupta

Kołasiński

2007

Applied Surface Science

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“…This mechanism involves both the re-melting of the tips of columns and the deposition of the intense ablated flux of Sicontaining vapour that is produced with each laser pulse. [4,9,19] In addition to the redeposition phenomenon observed, pitted pillars are also observed. Several authors have related the pitting in the necks of these pillars to thermal stress.…”

Section: Resultsmentioning

confidence: 84%

Fabrication and characterization of silicon pillars formed by nanosecond pulsed excimer laser in vacuum

Djemaa

Gabouze

Yaddadene

et al. 2010

Surface & Interface Analysis

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Arrays of well defined silicon microcolumns were formed by cumulative nanosecond pulsed excimer laser irradiation of single-crystal silicon in vacuum. The changes in silicon surface morphology were systematically determined and compared as the number of KrF laser shots was increased from 1 to 15 000 in vacuum. Moreover, as the number of laser shots increases, formation of well defined silicon pillars oriented towards the laser beam has been observed. Finally, the reflectance spectra show a total reflectance of 5%-6% in the wavelength region 375-800 nm and that of 0% at a wavelength of about 870 nm.

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“…Keywords：femtosecond pulse laser; microstructure machining; silicon; ablation threshold; incubation effect Currently, there is considerable interest in the precise material processing of silicon with femtosecond laser. It is well known that the quality of ablated patterns with femtosecond laser on silicon surfaces is much better than in the cases of picosecond and nanosecond [1][2][3][4][5] . The advantages of femtosecond laser make it promising for future applications in precise material processing [6][7][8][9][10][11] .…”

mentioning

confidence: 99%

Effects of parameters in femtosecond laser micromachining on ablation of silicon

Chen

Geng

et al. 2009

Trans. Tianjin Univ.

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Abstract：A series of ablation experiments on silicon surface by femtosecond laser system of 775 nm and 150 fs duration pulses were carried out. The morphological characteristics and the associated effect in the ablation were tested by atomic force microscope (AFM), scanning electron microscope (SEM), focused ion beam (FIB), and the optic microscope. The single pulse threshold can be obtained directly. For the multiple pulses, the ablation threshold varies with the number of pulses applied to the surface due to the incubation effect. By analyzing the experimental data, the thresholds of laser fluences under various laser pulse numbers were obtained, and the relationships between ablation area and laser energy and laser pulse number were concluded. Meanwhile, the periodic ripple structure on silicon surface was found. Under the condition of certain laser power, the number of laser pulse can influence the formation of ripples. Keywords：femtosecond pulse laser; microstructure machining; silicon; ablation threshold; incubation effect Currently, there is considerable interest in the precise material processing of silicon with femtosecond laser. It is well known that the quality of ablated patterns with femtosecond laser on silicon surfaces is much better than in the cases of picosecond and nanosecond [1][2][3][4][5] . The advantages of femtosecond laser make it promising for future applications in precise material processing [6][7][8][9][10][11] .In this paper, the ablation threshold for multiple pulses is reported due to the laser interaction with Si(100) and Si(111) surfaces. Furthermore, when the laser pulse energy is around the material's threshold, the periodic structure, also termed as ripples, on silicon surface, was investigated.

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Fabrication of ordered arrays of silicon cones by optical diffraction in ultrafast laser etching with SF6

Cited by 44 publications

References 23 publications

Ultrafast-laser-assisted chemical restructuring of silicon and germanium surfaces

Ultrafast-laser-assisted chemical restructuring of silicon and germanium surfaces

Fabrication and characterization of silicon pillars formed by nanosecond pulsed excimer laser in vacuum

Effects of parameters in femtosecond laser micromachining on ablation of silicon

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