Fabrication of organic interfacial layered Ag/Cd-doped ZnO hybrid optoelectronic device: The effect of light on its electrical parameters

ÜNAL, Fatih; Aktas, Sitki; Kurt, Mustafa; Kabaer, Mehmet

doi:10.1557/s43578-023-00969-z

Cited by 1 publication

(2 citation statements)

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“…The phonon dispersions calculated within the first Brillouin zone for ZnO and CdS are shown in Figure a,b. All frequencies have positive values, satisfying the crystal stability condition where the lattice needs to be stable with respect to small atomic displacements . This further supports the stability of the individual synthesized compounds under ambient pressure.…”

Section: Resultssupporting

confidence: 71%

“…All frequencies have positive values, satisfying the crystal stability condition where the lattice needs to be stable with respect to small atomic displacements. 87 This further supports the stability of the individual synthesized compounds under ambient pressure. From the phonon densities of state, it is noted that in both analyzed compounds, the transition metal contributes almost entirely to the vibrational spectrum at low frequencies, while the ligands vibrate with higher frequencies separated by a phonon gap.…”

Section: Pec Activity Analysis Linear Sweep Voltammetry (Lsv)supporting

confidence: 64%

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Fabrication of ZnO Scaffolded CdS Nanostructured Photoanodes with Enhanced Photoelectrochemical Water Splitting Activity under Visible Light

Rokade,

Rahane,

Živković

et al. 2024

Langmuir

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CdS, characterized by its comparatively narrow energy band gap (∼2.4 eV), is an appropriate material for prospective use as a photoanode in photoelectrochemical water splitting. Regrettably, it encounters several obstacles for practical and large-scale applications, including issues such as bulk carrier recombination and diminished conductivity. Here, we have tried to address these challenges by fabricating a novel photoelectrode (ZnO/CdS) composed of onedimensional ZnO nanorods (NRs) decorated with two-dimensional CdS nanosheets (NSs). A facile two-step chemical method comprising electrodeposition along with chemical bath deposition is employed to synthesize the ZnO NRs, CdS NSs, and ZnO/CdS nanostructures. The prepared nanostructures have been investigated by UV−visible absorption spectroscopy, X-ray diffraction, Raman spectroscopy, transmission electron microscopy (TEM), and scanning electron microscopy. The fabricated ZnO/CdS nanostructures have shown enhanced photoelectrochemical properties due to the improvement of the semiconductor junction surface area and thereby enhanced visible light absorption. The incorporation of CdS NSs has been further found to promote the rate of the charge separation and transfer process. Subsequently, the fabricated ZnO/CdS photoelectrodes achieved a photocurrent conversion efficiency 3 times higher than that of a planar ZnO NR photoanode and showed excellent performance under visible light irradiation. The highest applied bias photon-to-current conversion efficiency (% ABPE) of about ∼0.63% has been obtained for the sample with thicker CdS NSs on ZnO NRs with a photocurrent density of ∼1.87 mA/cm 2 under AM 1.5 G illumination. The newly synthesized nanostructures further demonstrate that the full photovoltaic capacity of nanomaterials is yet to be exhausted.

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Section: Resultssupporting

confidence: 71%

Section: Pec Activity Analysis Linear Sweep Voltammetry (Lsv)supporting

confidence: 64%