Fabrication of organic light-emitting diode using molybdenum trioxide interlayer between electrode and organic interface

Abstract

In this study, high-performance of organic light-emitting diodes (OLEDs) with a buffer layer of MoO 3 is demonstrated. With an optimal thickness of MoO 3 (12 nm), the luminance efficiency is found to be increased compared to the single layer anode OLED. To study the influence of MoO 3 buffer layer on OLED performance, we deposited MoO 3 films with different thicknesses on the fluorine-doped tin oxide (FTO) surface and studied J-V and L-V characteristics of the OLED devices. Also, further analysis was carried out by measuring sheet resistance, optical transmittance and surface morphology with the FESEM images. Here, we found that MoO 3 (12 nm) buffer layer is a good choice to increase the efficiency of FTO-based OLED devices within the tunnelling region. Here, the maximum value of current efficiency is 6.15 cd A −1 .