Fabrication of p-SnO/n-SnO2 transparent p-n junction diode by spray pyrolysis and extraction of device’s intrinsic parameters

Eqbal, Ebitha; Raphael, Rakhy; Saji, K. J.; Anila, E.I.

doi:10.1016/j.matlet.2019.03.122

Cited by 16 publications

(8 citation statements)

References 6 publications

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“…It is important to remark that the traces of the Sn phase decreased when the ppO 2 was increased, although not disappeared completely. According to the literature, the remaining traces of Sn cause the presence of acceptor states in the SnO x thin film, which enhances its p‐type mobility 3,21,29 . Figure 3A also shows the effect of annealing on XRD measurements for three samples of SnO x deposited at a ppO 2 of 8.0% and annealed to 160°C, 180°C, and 200°C.…”

Section: Resultsmentioning

confidence: 83%

“…27,28 SnO x thin film, which enhances its p-type mobility. 3,21,29 Figure 3A also shows the effect of annealing on XRD measurements for three samples of SnO x deposited at a ppO 2 of 8.0% and annealed to 160 C, 180 C, and 200 C. These three patterns reveal a mixture of Sn and SnO crystalline phases; however, the film annealed at 160 C presented a peak at 44.9 , which suggests there is an amount of Sn traces higher than that in the other two films. In the sample annealed at 200 C, the intensity of the SnO XRD peaks was reduced, and the intensity of the (110) peak increased compared with the intensity of the (101) peak.…”

Section: Methodsmentioning

confidence: 97%

“…Furthermore, it has also been reported that SnO x thin films doped with Y 3+ , Sb 3+ , and N show p-type conductivity behavior. 9,17 SnO thin films can exhibit either tetragonal [18][19][20] or orthorhombic 21 structure. Kim and co-authors reported SnO thin films with tetragonal structure after annealing at a temperature of 300 C by using RF sputtering with a SnO/Sn (9:1 mol% ratio) composite target.…”

Section: Introductionmentioning

confidence: 99%

“…SnO thin films can exhibit either tetragonal 18–20 or orthorhombic 21 structure. Kim and co‐authors reported SnO thin films with tetragonal structure after annealing at a temperature of 300°C by using RF sputtering with a SnO/Sn (9:1 mol% ratio) composite target.…”

Section: Introductionmentioning

confidence: 99%

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SnO_x thin films with tunable conductivity for fabrication of p–n homo‐junction

Garzón-Fontecha

Castillo

Curiel

et al. 2020

Surface & Interface Analysis

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Tin oxide (SnO x) has been widely used for the fabrication of transparent and flexible devices because of its excellent optical and electronic properties. In this work, we established a methodology for the synthesis of SnO x thin films with p-type and n-type tunable conductivity by direct currecnt (DC) magnetron sputtering. The SnO x thin films changed from p-type to n-type by increasing the relative oxygen partial pressure (ppO 2) from 4.8% to 18.5% and by varying the working pressure between 1.8 and 2.5 mTorr. The SnO x thin films were annealed at 160 C, 180 C, and 200 C for 30 min to promote the formation of the desired crystalline structures. At the annealing temperature of 180 C in air ambient, the SnO x thin films showed a tetragonal structure with Sn traces. Having found the optimal conditions, we deposited both types of SnO x thin films with the same tetragonal structure and similar chemical stoichiometry. Also, the conditions to obtain thin films with the highest mobility values for p-type (1.10 cm 2 /Vs) and n-type (22.20 cm 2 /Vs) were used for fabricating the device. Finally, the implementation of a SnO x-based p-n diode was demonstrated using transparent SnO x thin films developed in this work, illustrating their potential use in transparent electronics.

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Section: Resultsmentioning

confidence: 83%

Section: Methodsmentioning

confidence: 97%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

SnO_x thin films with tunable conductivity for fabrication of p–n homo‐junction

Garzón-Fontecha

Castillo

Curiel

et al. 2020

Surface & Interface Analysis

View full text Add to dashboard Cite

show abstract

“…[9] However, there are few reports about flexible and transparent rectifying diodes, such as metal-oxide semiconductors, [10,11] including light emitting diodes (LEDs), [12] photodetectors, [13,14] near-field communication (NFC) devices, [15] and pacemakers. [16] One of the materials widely used in transparent electronics is tin (II) oxide (SnO) because of its outstanding electrical and optical properties, mainly for fabricating diodes [17][18][19][20][21] and thin-film transistors on glass substrates, which are rigid. [22] The research group of Wang et al, reported a transparent diode on glass using p-SnO/n-SnO 2 thin films deposited by DC magnetron sputtering; they obtained p-type films with mobility of 5.27 cm 2 V À1 s À1 .…”

Section: Introductionmentioning

confidence: 99%

Electrical Properties of a p‐SnO_x/n‐SnO_x Diode on a Flexible Polyimide Substrate

Garzon-Fontecha,

Castillo,

Regalado

et al. 2023

Physica Status Solidi (a)

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In recent years, flexible electronics have been an area of considerable interest due to the development of materials such as transparent semiconductor oxides, which are compatible with flexible substrates. Herein, lithography and magnetron sputtering are used to fabricate a flexible p–n diode of SnOx thin films on a polyimide substrate and electrical characterization is performed by varying the bending cycles. Using specific oxygen concentrations in the reactive gas mixture of the sputtering system, transparent p‐SnO0.8 (8.0% ppO2) and n‐SnO1.2 (18.5% ppO2) on polyimide substrates are successfully deposited. Electrical results show the SnOx diode exhibits a threshold voltage of 2.24 V and a great rectification ratio of 102. It is found the diode has excellent I–V rectifying behavior even when subjected to bending with a radius of curvature of 10 mm. It is important to note that after 200 bending cycles at a curvature radius of 50 mm, the p‐SnOx/n‐SnOx diode retains its rectifying behavior, making it attractive for large‐scale applications in transparent and flexible electronics.

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Formation of All Tin Oxide p–n Junctions (SnO–SnO₂) during Thermal Oxidation of Thin Sn Films

Panda,

Barala,

Hazra

et al. 2024

Physica Status Solidi (a)

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Metastable stannous oxide (SnO) phase of p‐type semiconductor and all tin oxides p–n junctions of SnO–SnO2 nanostructures are formed by controlled thermal oxidation of thin tin films. High purity Sn is deposited on quartz substrates using a vacuum‐assisted thermal evaporation technique. Afterwards, controlled thermal oxidation at different temperatures is performed in air ambient condition (150–800 °C). Various surface characterization techniques have been employed to analyze the structure, morphology, chemistry, optical, and electronic properties of these SnOx films. P‐type SnO phase is found to be thermodynamically stable at lower oxidation temperatures (250–400 °C), while n‐type SnO2 phase starts to appear above 500 °C. Highly uniform and dense SnO nanospheres along with few 1D nanorods are observed after oxidation at 400 °C. Mixed oxide phases of p–n junctions with a sudden decrease in electrical conductivity is observed for 500 °C film. Significantly lower surface conductivity of mixed oxide phase indicates the formation of depletion layers between p‐type SnO and n‐type SnO2 nanograins. A transition from SnO layer to SnO2 layer is also observed above 600 °C. Overall, SnOx‐based nanostructures would be a potential candidate for solar cells, p‐channel thin film transistors, p–n junction diodes and gas sensors.

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Fabrication of p-SnO/n-SnO2 transparent p-n junction diode by spray pyrolysis and extraction of device’s intrinsic parameters

Cited by 16 publications

References 6 publications

SnO_x thin films with tunable conductivity for fabrication of p–n homo‐junction

SnO_x thin films with tunable conductivity for fabrication of p–n homo‐junction

Electrical Properties of a p‐SnO_x/n‐SnO_x Diode on a Flexible Polyimide Substrate

Formation of All Tin Oxide p–n Junctions (SnO–SnO₂) during Thermal Oxidation of Thin Sn Films

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Fabrication of p-SnO/n-SnO2 transparent p-n junction diode by spray pyrolysis and extraction of device’s intrinsic parameters

Cited by 16 publications

References 6 publications

SnOx thin films with tunable conductivity for fabrication of p–n homo‐junction

SnOx thin films with tunable conductivity for fabrication of p–n homo‐junction

Electrical Properties of a p‐SnOx/n‐SnOx Diode on a Flexible Polyimide Substrate

Formation of All Tin Oxide p–n Junctions (SnO–SnO2) during Thermal Oxidation of Thin Sn Films

Contact Info

Product

Resources

About

SnO_x thin films with tunable conductivity for fabrication of p–n homo‐junction

SnO_x thin films with tunable conductivity for fabrication of p–n homo‐junction

Electrical Properties of a p‐SnO_x/n‐SnO_x Diode on a Flexible Polyimide Substrate

Formation of All Tin Oxide p–n Junctions (SnO–SnO₂) during Thermal Oxidation of Thin Sn Films