2023
DOI: 10.1016/j.matpr.2023.02.104
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Fabrication of p-type and n-type SnS thin films through vacuum-free deposition techniques

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Cited by 6 publications
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“…SnS is one of the Tin chalcogenide layered semiconductors in group IV-VI, SnS, SnSe is a promising material for solar energy conversion 11,12 . SnS films are highly suitable for any application in several of solid-state devices, such as photovoltaic, photoelectrochemical(PEC), photoconductive cells, and intercalation battery systems 13,14 . In addition, SnS thin films have a large optical absorption coefficient (> 104 cm-1) [13][14][15] .…”
Section: Introductionmentioning
confidence: 99%
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“…SnS is one of the Tin chalcogenide layered semiconductors in group IV-VI, SnS, SnSe is a promising material for solar energy conversion 11,12 . SnS films are highly suitable for any application in several of solid-state devices, such as photovoltaic, photoelectrochemical(PEC), photoconductive cells, and intercalation battery systems 13,14 . In addition, SnS thin films have a large optical absorption coefficient (> 104 cm-1) [13][14][15] .…”
Section: Introductionmentioning
confidence: 99%
“…SnS films are highly suitable for any application in several of solid-state devices, such as photovoltaic, photoelectrochemical(PEC), photoconductive cells, and intercalation battery systems 13,14 . In addition, SnS thin films have a large optical absorption coefficient (> 104 cm-1) [13][14][15] . It is a p-type window layer heterojunction device [16][17][18] .…”
Section: Introductionmentioning
confidence: 99%