2009
DOI: 10.1109/jlt.2009.2022282
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Fabrication of Photonic Wire and Crystal Circuits in Silicon-on-Insulator Using 193-nm Optical Lithography

Abstract: Abstract-High-index contrast silicon-on-insulator technology enables wavelength-scale compact photonic circuits. We report fabrication of photonic circuits in silicon-on-insulator using complementary metal-oxide-semiconductor processing technology. By switching from advanced optical lithography at 248 nm to 193 nm, combined with improved dry etching, a substantial improvement in process window, linearity, and proximity effect is achieved. With the developed fabrication process, propagation and bending loss of … Show more

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Cited by 207 publications
(122 citation statements)
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“…10 The waveguides are 500 nm wide and 220 nm high and we only excite the transverse-electric (TE) mode of the waveguide. The ring resonators have a footprint of 12 × 12 μm 2 and are grouped in sets of four rings with slightly increasing circumference.…”
Section: Silicon-on-insulator Designmentioning
confidence: 99%
“…10 The waveguides are 500 nm wide and 220 nm high and we only excite the transverse-electric (TE) mode of the waveguide. The ring resonators have a footprint of 12 × 12 μm 2 and are grouped in sets of four rings with slightly increasing circumference.…”
Section: Silicon-on-insulator Designmentioning
confidence: 99%
“…To reduce the process development costs, 200 mm dummy SOI wafers were fabricated by depositing 220 nm of amorphous Si on top of 2000 nm high density plasma silicon dioxide instead of crystalline SOI wafers. After layer deposition, the circuit pattern is first transferred into the photoresist using 193 nm optical lithography and followed by dry etching [6]. During lithography, the wafers are coated with 77 nm of organic bottom anti-reflective coating layer (BARC) and 330 nm of photoresist.…”
Section: Experiments Designmentioning
confidence: 99%
“…The source power was inductively coupled to the plasma through the quartz top plate in the chamber, while the wafer temperature was kept at 60 o C. The etch gases used in our study are Cl 2 , O 2 , HBr, CF 4 and SF 6 . Table 1 summarizes the sequence of the etching processes inside the chamber and the gas mixtures.…”
Section: Etching System and Sequencementioning
confidence: 99%
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“…First of all, it has a high refractive index contrast permitting very compact sensors of which many can be incorporated on a single chip, enabling multiplexed sensing. Secondly, silicon-on-insulator photonic chips can be made using CMOS-compatible process steps, allowing for a strong reduction of the chip cost by high volume fabrication [2]. These sensor chips can therefore be disposable, meaning that the chip is only used once, avoiding complex cleaning of the sensor surface after use, which is required to avoid cross contamination when used for medical diagnostics.…”
Section: Introductionmentioning
confidence: 99%