Fabrication of photovoltaic FeS_xO_y/ZnO heterostructures by electrochemical deposition

Abstract

FeS x O y /ZnO heterostructures are fabricated by the electrochemical deposition (ECD) method. ZnO is first deposited by galvanostatic ECD on indium-tin-oxide (ITO) substrate and then FeS x O y is deposited on ZnO. In ECD of FeS x O y , three-step pulse bias is adopted in addition to DC bias. The addition of a complexing agent (tartaric acid) and stirring of the solution is also examined. With tartaric acid in the solution, FeS x O y deposition on ZnO failed. Without tartaric acid, FeS x O y /ZnO heterojunctions showing rectifying electrical properties are fabricated. Weak photovoltaic effects are confirmed only when FeS x O y is deposited by three-step pulse with stirring.