Fabrication of planar organic nanotransistors using low temperature thermal nanoimprint lithography for chemical sensor applications

Kettle, Jeff; Whitelegg, S.; Song, Aimin; Wedge, David C.; Kotacka, Libor; Kolařík, Vladimír; Madec, Marie-Beatrice; Yeates, Stephen G.; Turner, Michael L.

doi:10.1088/0957-4484/21/7/075301

Cited by 25 publications

(12 citation statements)

References 33 publications

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“…As such, they do not require registration between different layers. The whole SSD arrays can be structured in a single step of nanolithography with high yields, using for instance high‐throughput nanoimprint techniques . Importantly, integration of SSD arrays with planar organic transistors is straightforward and allows relatively easy fabrication of polymer semiconductor circuits.…”

Section: Discussionmentioning

confidence: 99%

20 megahertz operation of organic nanodiodes

Majewski¹,

Song²

2016

Phys. Status Solidi B

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Solution-processed polymer nanodiodes operating at frequencies up to 20 MHz are demonstrated. As the active layer, p-type semiconductor poly(didodecylquarterthiophene) (PQT12) was used. It is shown that devices based on linear arrays of semiconducting polymer nanowires with intentionally broken symmetry display nonlinear current-voltage characteristics similar to conventional diodes. The so-called self-switching devices (SSDs) are single layered, planar structures that can be easily fabricated in a single step of nanolithography. The SSDs possess substantially lower parasitic capacitance between contacts than conventional organic diodes and organic thin-film transistors, and we show that the nano-rectifiers can operate at frequencies well above both 125/134 kHz and 13.56 MHz RFID communication bands.

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Section: Discussionmentioning

confidence: 99%

20 megahertz operation of organic nanodiodes

Majewski¹,

Song²

2016

Phys. Status Solidi B

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“…Different imprint pressure situation was simulated. At 1×10 5 Pa, the resist does not fill the cavity of the stamp. At 1×10 8 Pa, the resist only partly fill the cavity.…”

Section: Temperature's Impact On Resist Stressmentioning

confidence: 99%

“…However, traditional thermal nanoimprint lithography (TNIL) needs high temperature, which needs long process time and increase thermal stress [3]. Therefore, it is necessary to conduct research on low temperature nanoimprint lithography (LTNIL) [4,5]. In LTNIL process, the resist is heated to a temperature just beyond the polymer's glass transition temperature (T g ).…”

Section: Introductionmentioning

confidence: 99%

Nanoimprint Resist Stress Analysis under Low Temperature by Finite Element Analysis

Sun¹,

Ma²,

Hu³

2015

Proceedings of the 2015 International Conference on Electromechanical Control Technology and Transportation

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Traditional thermal nanoimprint lithography (TNIL) needs high temperature. This limits its application in the biological and medical area where substrate cannot sustain high temperature. Low temperature nanoimprint lithography (LTNIL) allows imprint conducted under temperature a little higher than transition temperature of the resist. However, in order to replicate with high fidelity, the process parameters should be optimized. This contribution employed finite element analysis to research the stress of nanoimprint resist under low temperature from three angles: imprint temperature, pressure on stamp and imprint time. The contact part between the stamp and resist has bigger stress than other areas. The bottom of the resist has minimum stress. With proper imprint temperature and time, the resist can fully fill the cavity of the stamp and the stress of the resist does not change anymore. The stress of the resist increases with the pressure on the stamp.

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“…The fabrication of a large number of SSDs in a single lithography step, without the need for interconnection layers, can be realized due to the planar architecture of the device, which subsequently helps to avoid introducing undesirable parasitic elements . This main feature of SSD therefore not only makes the entire fabrication process simpler, faster, and at lower cost in comparison with other conventional electronic devices, but also allows the manufacturing of SSDs with large‐area fabrication techniques, such as nanoimprinting lithography , which can further reduce the whole production cost.…”

Section: Introductionmentioning

confidence: 99%

RF characterization of unipolar nanorectifiers at zero bias

Kasjoo

Singh

Song

2015

Phys. Status Solidi A

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A novel unipolar nanodevice, the self‐switching diode (SSD), has recently shown promising properties as an ultrahigh‐speed detector by exploiting its nonlinear diode‐like behavior and its inherently low parasitic capacitance. In this report, two large SSD arrays, each has ∼1000 SSDs connected in parallel within the fingers of an inter‐digital structure, were characterized based on coplanar measurement in the microwave region using a network analyzer. These SSD arrays were realized in a single lithography step, hence allowing for a simple, fast and low‐cost fabrication process. Analysis on rectification properties of SSD is presented and compared with the measurement results. Despite of the large impedance mismatch between SSD array and measurement system, the device was able to rectify microwave signal with extrinsic responsivity achieved up to 400 V/W at unbiased condition. The estimated noise‐equivalent power was ∼41 pW/Hz1/2, comparable to other diode‐based rectifiers at high speed.

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Fabrication of planar organic nanotransistors using low temperature thermal nanoimprint lithography for chemical sensor applications

Cited by 25 publications

References 33 publications

20 megahertz operation of organic nanodiodes

20 megahertz operation of organic nanodiodes

Nanoimprint Resist Stress Analysis under Low Temperature by Finite Element Analysis

RF characterization of unipolar nanorectifiers at zero bias

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