Fabrication of poly(3-hexylthiophene) nanowires for high-mobility transistors

Nawrocki, Robert A.; Pavlica, Egon; Ćelić, Nevena; Orlov, Dmitry; Valant, Matjaž; Mihailović, D.; Bratina, Gvido

doi:10.1016/j.orgel.2015.11.038

Cited by 16 publications

(13 citation statements)

References 61 publications

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“…As the concentration of the solution decreases to 0.001 wt %, which is 500 to 1000 times lower than that of the standard solution used for fabrication of a P3ATs thin‐film transistor, the single layer NWs network with high coverage (41%) is still obtained in the sample with the help of the rotation field as shown in Figure (e). Of note, the NWs bundles consisting of several parallel NWs are observed in Figure (d,f), which indicates that the rotation field reduces the entanglement between NWs.…”

Section: Resultsmentioning

confidence: 96%

“…Self‐assembled 1D nanowires (NWs) of regioregular poly(3‐alkylthiophene)s (P3ATs) deposited from the dilute solutions have recently attracted increasing attention in scientific research and industrial application of organic electronics. Compared with the 2D thin film counterparts, highly structural order and large aspect ratio (100–1000) of the NWs provide excellent carrier transport along the axis direction, leading to increasing carrier mobility in field‐effect transistors (FETs) and improved solar conversion efficiency in solar cells . Until now, many efforts have been made on exploring the effective, facile, and reproducible methods for producing P3ATs NWs with high yield .…”

Section: Introductionmentioning

confidence: 99%

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Rotation‐assisted formation of poly(3‐butylthiophene) nanowires: Morphology, microstructure, and electrical property

Yuan

Zhang

Cui

et al. 2018

J Polym Sci B Polym Phys

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The phenomenon of "shear-induced crystallization" is commonly observed for crystalline polymers. Herein, we demonstrate that this concept can be applied to promote the self-assembly of the conductive nanowires (NWs) in dilute solution. It is found that, by a simple rotation-assisted method, higher yield of poly(3-butylthiophene) (P3BT) NWs in anisole solvent was obtained than the case under static condition. While the length as well as the crystal modification of the NWs is not changed. The structural analysis suggests that the P3BT NWs take the crystal modification of form I 0 rather than the conventional form I, independent of the sampling condition. This conclusion is further confirmed by investigating the phase transition behavior of the NWs using synchrotron radiation wide-angle X-ray diffraction technique. Unexpectedly, the active layer in field-effect transistor (FET) device fabricated by well-shaped pure NWs network formed under the rotation field shows the comparable carrier mobility with that fabricated by the ambiguous NWs network obtained under the static condition, which implies that the amorphous part plays an important role in affecting the electrical property.

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Section: Resultsmentioning

confidence: 96%

Section: Introductionmentioning

confidence: 99%

Rotation‐assisted formation of poly(3‐butylthiophene) nanowires: Morphology, microstructure, and electrical property

Yuan

Zhang

Cui

et al. 2018

J Polym Sci B Polym Phys

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“…Among these efforts, a robust way to enhance the electrical characteristics, especially the mobility of PTFTs, is improving the crystallinity and conductivity of the active layer thin film. Fabricating the mesoscale crystalline structure in the polymer films has been widely studied, for example, using high‐boiling‐point solvent to increase the crystallinity of poly(3‐hexylthiophene) (P3HT) thin films; increasing the solvent vapor pressure during spin‐coating to control the nanostructures of P3HT thin‐film; using solution‐ﬂoating method to form a thin film composed of P3HT nanowires; adopting a slow evaporation procedure of the solvent deposited on the P3HT film for the generation of micro/nano structures; mixing P3HT and polystyrene (PS) together in poor solvent for P3HT to increase the aggregation of P3HT in films, and so on. All these approaches are either complicated or strict for environment and they are not suitable for large‐area printing as the mesoscale crystalline structure is not formed in the solution.…”

Section: Values Of the Device Performance Parameters (Average Values mentioning

confidence: 99%

Nanowire Junction Induced High Threshold Voltage in Poly(3‐hexylthiophene) Mesoscale Crystalline Thin‐Film Transistors with Significantly Enhanced Mobility

Deng

Jiang

Sun

et al. 2020

Physica Rapid Research Ltrs

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Fabrication of nanowires in polymer films can dramatically enhance the mobility of thin‐film transistors (TFTs). Unlike the popular method of forming nanowires after spin‐coating films, here a water‐bath method to fabricate the micrometer‐long nanowires in the poly(3‐hexylthiophene) (P3HT) solution is introduced, which is suitable for large‐area printing electronic application. The resulting transistor exhibits significantly enhanced mobility and excellent device stability. However, the threshold voltage of the device is increased, compared with the amorphous film device. The underlying mechanism of the mesoscale crystalline induced threshold voltage increase has been rarely studied. The temperature‐dependent characteristics imply that the activation energy of the device with nanowires is higher than that of the amorphous one, indicating nanowires can introduce deep traps. This suggests that the charge transport is mainly limited by the deep traps at the junctions between the nanowires considering the trap density inside the nanowires is significantly low. The deep traps introduced by the junctions can increase the threshold voltage as the device needs higher voltage to fill these traps in the channel before the device is turned on. This explains why the devices with nanowires have an increased threshold voltage while their mobilities are dramatically enhanced.

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“…Two coplanar 100 nm thick Au electrodes were vacuum-deposited through shadow mask onto the quartz substrate (interelectrode distance 50-200 mm) prior to spin-coating (Scheme 1). 22,[25][26][27][28] TOF measurements were performed by applying DC voltage (V b ) ranging from À500 V to 500 V between electrodes. The biased electrode was connected also to a current amplier through a bias-t element (particulars BT-01), which is used to decouple transient photocurrent response from the constant dark current, schematically depicted as capacitor (C) and inductor (L) in Scheme 1.…”

Section: Thin Lm Preparation and Characterizationmentioning

confidence: 99%