Fabrication of polydimethylsiloxane shadow masks for chemical solution deposition of CdS thin-film transistors

Impact of Gate Dielectric in Carrier Mobility in Low Temperature Chalcogenide Thin Film Transistors for Flexible Electronics

“…CdS, with a bandgap of 2.4 eV ͑in bulk͒, 18 was studied as the semiconductor active layer during the early development of TFTs. 19 Recently, chemically deposited CdS active layers have shown acceptable performance in TFTs with field effect mobility values in the range of 0.5-1.5 cm 2 V −1 s −1 , comparable to those obtained with a TFT based in a-Si:H. [20][21][22][23][24] However, all of these articles included a postdeposition annealing process at temperatures higher than 200°C. The maximum processing temperature for flexible electronics must be lower than 200°C.…”

Recent status of chemical bath deposited metal chalcogenide and metal oxide thin films

“…Nair et al [48] used nanostructure CdS thin films for fabricating homojunction CdS solar cells. The CBDeCdS thin films are used for window and buffer layers in the solar cells [49e57] and thin film transistors [58]. Boyle et al [59] and Kostoglou et al [60] developed a comprehensive model useful in process design and optimization of CdS thin-film growth and model containing the temporal variation of reactants concentrations as well as of the precipitating solid phase, both in the bulk and on the …”

A new mussel-inspired polydopamine phototransistor with high photosensitivity: signal amplification and light-controlled switching properties

“…1a). The patterning of the PDA layer was carried out by immersion of the SiO 2 /Si substrate covered by a flexible PDMS shadow mask prepared by two-step replica molding 18 in a PDA solution. The PDA layer was prepared by oxidative self-polymerization of DA (6 mg mL À1 ) in a 0.01 M tris(hydroxylmethyl)aminomethane (THAM) buffer at a pH of 8.5 for 1 h under an O 2 atmosphere.…”