Fabrication of Porous Lead Bromide Films by Introducing Indium Tribromide for Efficient Inorganic CsPbBr3 Perovskite Solar Cells

Abstract

In the process of preparing CsPbBr3 films by two-step or multi-step methods, due to the low solubility of CsBr in organic solvents, the prepared perovskite films often have a large number of holes, which is definitely not conducive to the performance of CsPbBr3 perovskite solar cells (PSCs). In response to this problem, this article proposed a method of introducing InBr3 into the PbBr2 precursor to prepare a porous PbBr2 film to increase the reaction efficiency between CsBr and PbBr2 and achieve the purpose of In (Ⅲ) incorporation, which not only optimized the morphology of the produced CsPbBr3 film but also enhanced the charge extraction and transport capabilities, which was ascribed to the reduction of the trap state density and impurity phases in the perovskite films, improving the performance of CsPbBr3 PSCs. At the optimal InBr3 concentration of 0.21 M, the InBr3:CsPbBr3 perovskite solar cell exhibited a power conversion efficiency of 6.48%, which was significantly higher than that of the pristine device.

High-Performance In3+-Doped CsPbBr3 Quantum Dots for Wide Color Gamut Backlighting

“…It can be observed from Figure 2a that the XPS spectra of pristine CsPbBr Compared to the pristine CsPbBr 3 QDs, both the 4f 5/2 and 4f 7/2 peaks of Pb 2+ and the 3d 3/2 and 3d 5/2 peaks of Br − (Figures 2c,d) in In 3+ -doped CsPbBr 3 QDs are shifted toward higher binding energies (0.2 eV), which proves that indium ions have been successfully doped into the lattice, and also suggests that the chemical environment of the [PbBr 6 ] 4− octahedron is changed and the Pb−Br interaction is enhanced by the doping of In 3+ ions. 41,42 The Cs 3d peaks barely changed upon doping with In 3+ ions (Figure S2). 3a,b .…”

Controlled Growth of Porous InBr3: PbBr2 Film for Preparation of CsPbBr3 in Carbon-Based Planar Perovskite Solar Cells

“…According to Figure 5 b, In 3d 5/2 and In 3d 3/2 peaked at 444.9 eV and 452.3 eV, respectively, and the high-resolution core-level binding energies of Cs 3d, Pb 4f, and Br 3d all shifted toward higher values compared with those in the pure CsPbBr 3 , which indicates that part of the In(III) in the porous PbBr 2 was doped into the perovskite lattice in the process of transforming CsPbBr 3 , and caused the chemical state of [PbBr 6 ] 4− octahedron to change [ 38 ]. The incorporation of In 3+ or In cluster not only improves the spatial symmetry of the CsPbBr 3 lattice structure, but also reduces vacancy defects, which is beneficial to the extraction and transfer process of the charge, and finally significantly optimizes the J SC of the device [ 30 , 38 , 39 , 40 ].…”

“…The porous structure of PbBr 2 not only allows the effective diffusion of CsBr solution to gain high-purity CsPbBr 3 , but also offers enough space for the growth of CsPbBr 3 grains under stress-free conditions, resulting in high-quality CsPbBr 3 film with larger grain size and lower grain boundary density. In our previous work, we prepared porous PbBr 2 films on mesoporous TiO 2 (m-TiO 2 ) by introducing InBr 3 into the PbBr 2 precursor solution, and achieved In 3+ or In cluster doping with CsPbBr 3 , thereby improving the growth quality of CsPbBr 3 films and enhancing the efficiency of CsPbBr 3 solar cells with mesoporous structure [ 30 ].…”

Recent Progress of Carbon‐Based Inorganic Perovskite Solar Cells: From Efficiency to Stability

“…Device structure (optimized strategy) Fabrication technique (perovskite/carbon) According to valence states, B-site ions substitution can be divided into three types: Ag + (1.15 Å) ion substitution; [230] divalent substitution, such as Sn 2+ (0.93 Å), [99,231,232] Mg 2+ (0.72 Å), [233,234] Ca 2+ (1.00 Å), [234] Sr 2+ (1.12 Å), [234] Ba 2+ (1.35 Å), [234] Mn 2+ (0.67 Å), [100,235] Ni 2+ (0.69 Å), [235] Cu 2+ (0.73 Å), [235] Zn 2+ (0.74 Å), [235][236][237] and Cd 2+ (0.95 Å); [238,239] multivalent substitution, such as Sb 3+ (0.92 Å), [160] In 3+ (0.81 Å), [203,240,241] Bi 3+ (1.08 Å), [242] Nb 5+ (0.64 Å), [51] and lanthanide ions (e.g., Eu 2+ (1.17 Å), La 3+ (1.03 Å), Sm 3+ (0.96 Å), Tb 3+ (0.92 Å), Ho 3+ (0.90 Å), Er 3+ (0.89 Å), Yb 3+ (0.87 Å), etc.). [180,[243][244][245] Considering that Sn and Pb belong to IVA group and possess similar ns 2 np 2 electronic configuration and coordination geometry, partially substituting Pb 2+ with Sn 2+ was considered as the most effective strategy to optimize the optoelectronic properties of CsBX 3 .…”