Organic
thin film transistors (OTFTs) are a promising technology
for the application of photosensors in smart wearable devices. Light-induced
electrical behavior of OTFTs is explored to achieve diverse functional
requirements. In most studies, OTFTs show an increased drain current
(I
D) under light irradiation. Here, we
use an ultraviolet (UV) light absorption top layer, tris(8-hydroxyquinoline)
aluminum (Alq3), to improve the UV light response of poly(3-hexylthiophene-2,5-diyl)
(P3HT)-based OTFTs. Unexpectedly, the Alq3-covered device operated
at the accumulation mode demonstrates a decreased I
D during the UV light irradiation. N,N′-Ditridecyl-3,4,9,10-perylene tetracarboxylic diimide
(PTCDI, electron acceptor), pentacene (electron donor), and lithium
fluoride (LiF, insulator) as an interlayer were inserted between the
P3HT and the Alq3 layers. The PTCDI/Alq3-covered device also shows
an unusual decrease in I
D under the UV
light but an increase in I
D under the
green light. The pentacene/Alq3-covered device shows an increased I
D during the UV light irradiation and, unexpectedly,
a memory effect in I
D after removing the
UV light. The LiF/Alq3-covered device exhibits an electrical behavior
similar to the bare P3HT-based device under the UV light. Results
of spectroscopic analyses and theoretical calculations have shown
that the occurrence of charge transfer at heterojunctions during the
UV light irradiation causes charge modulation in the multilayered
P3HT-based OTFTs and then results in an unusual decrease or memory
effect in I
D. In addition, the unexpected I
D reduction can be observed in the Alq3-covered
poly[2,5-bis(3-tetradecylthiophen-2-yl)thieno[3,2-b]thiophene]-based OTFTs under UV light. The features, including opposite
electrical responses to different wavelengths of light and optical
memory effect, provide the multilayered P3HT-based OTFTs with potential
for various optical applications, such as image recognition devices,
optical logic gates, light dosimeters, and optical synapses.