The damage caused to amphiphilic n-alkane monolayers
under XPS measurement conditions was assessed
in a combined XPS-FTIR study supplemented by additional AFM imaging and
contact angle measurements.
Nine different self-assembled monolayer/substrate systems were
examined, comprising a long chain silane
(C18, OTS), a short chain silane (C1, MTS), a
functional (COOH-terminated) long chain silane (C18,
NTSox),
a long chain carboxylic acid (C20, AA), and four different
solid substrates (silicon, quartz, glass, and ZnSe).
Significant differences were observed in the behavior of the
various examined monolayer systems under
identical X-ray irradiation conditions. These are interpreted in
terms of effects associated with the specific
mode of layer-to-surface and intralayer coupling, the size of the
monolayer hydrocarbon core, and the
presence of radiation-sensitive functional groups in the layer.
All these factors and their influence on the
degradation path followed by a particular monolayer upon exposure to
the X-rays were found to be
interrelated, giving rise to a variety of possible damage patterns,
including an unexpected overall stabilization
effect initiated by the preferential rapid loss of a labile top
functional group (NTSox). XPS is shown to
be
insufficient as a tool for the evaluation of the radiation-induced
damage in such ultrathin films, because
of its insensitivity to loss of hydrogen and to structural
transformations that occur without a net loss of
carbon from the surface. Independent methods of surface analysis
(mainly FTIR), applied in conjunction
with XPS, provide a more comprehensive picture of the induced damage,
thus permitting a realistic
interpretation of the XPS experimental data as well as the design of
improved data acquisition procedures.
This could also assist in the tailoring of monolayers with
predetermined degradability, for specific purposes.
Finally, results of combined AFM-XPS-FTIR-contact angle
measurements suggest the possible formation
of a “diamond-like” surface film upon extensive X-ray irradiation
of an OTS/Si monolayer.