Fabrication of Si1−xGex alloy nanowire field-effect transistors

Abstract

The authors present the demonstration of nanowire field-effect transistors incorporating group IV alloy nanowires, Si1−xGex. Single-crystalline Si1−xGex alloy nanowires were grown by a Au catalyst-assisted chemical vapor synthesis using SiH4 and GeH4 precursors, and the alloy composition was reproducibly controlled in the whole composition range by controlling the kinetics of catalytic decomposition of precursors. Complementary in situ doping of Si1−xGex nanowires was achieved by PH3 and B2H6 incorporation during the synthesis for n- and p-type field-effect transistors. The availability of both n- and p-type Si1−xGex nanowire circuit components suggests implications for group IV semiconductor nanowire electronics and optoelectronics.

Axially graded heteroepitaxy and Raman spectroscopic characterizations of Si1−xGex nanowires

“…1͑a͒. 2,8, 9 We start off with the preparation of Au catalysts of the nanometer scale by deposition of very thin Au films or dispersion of colloidal Au nanoparticles on SiO 2 / Si ͑100͒ or quartz substrates. Subsequently, the chemical vapor syntheses was carried out under a varying flow of independent SiH 4 and GeH 4 precursors ͑specifically, 10% of SiH 4 and GeH 4 premixed in H 2 ͒ at given temperatures and pressure.…”

Electrodeposition of Ge, Sn and GexSn1-x from two different room temperature ionic liquids

“…Due to the lattice mismatch of 4.2 %, the band gap of Si x Ge 1-x is sensitive to the Ge concentration in the compound. The application of Si x Ge 1-x in various devices such as solar cells [1], field effect transistors (MODFET) [2], light-emitting diodes [3] and infrared detectors [4] has been considered.…”

Crystallization of Amorphous Si0.6Ge0.4 Nanoparticles Embedded in SiO2: Crystallinity Versus Compositional Stability

“…[1][2][3][4][5][6][7] The formation of nanocrystals has been reported using various approaches, e.g., ion implantation of Si or Ge in SiO 2 , [8][9][10][11] e-beam evaporation, 12 co-sputtering deposition of Si and/or Ge and SiO 2 , [13][14][15][16] and plasma-enhanced chemical vapor deposition. 17 These procedures usually end with an annealing step, necessary to form the nanocrystals, carried out at temperatures of 1000°C or higher and for times of around 1 h, conditions which often represent a high thermal budget.…”