The large-scale synthesis
of high-purity SiC nanowires is a challenge.
In this context, sponge-like graphene oxide (GO) was used as a carbon
source as well as a reaction template for directly synthesizing SiC
nanowires. GO was completely reacted with SiO to prepare high-purity
3C-SiC nanowires by thermal evaporation and carbothermal reduction
without the use of any catalyst, rather than by epitaxy. Characterization
was conducted using X-ray diffraction, scanning electron microscopy,
transmission electron microscopy, and selected-area electron diffraction.
The SiC nanowires had lengths of several tens of micrometers and a
perfect single-crystalline structure with a bamboo-like morphology.