Fabrication of SiC-Type Films Using Low-Energy Plasma-Enhanced Chemical Vapor Deposition (PECVD) and Subsequent Pyrolysis

Abstract

Silicon carbide (SiC) is a promising material for a variety of applications in the biomedical, aerospace, and energy industries. Solution-phase techniques have long been used to deposit precursor films prior to pyrolysis into SiC, but they tend to face difficulties with substrate compatibility and the use of toxic solvents. In this study, we introduce a solventless synthesis route for fabricating SiC-type films by depositing an organosilicon copolymer poly­(vinylphenyldimethylsilane-co-divinylbenzene) (p­(VPDMS-co-DVB)) film using low-energy plasma chemical vapor deposition (PECVD) followed by subsequent pyrolysis. The chemical structure of the film was systematically studied in situ during pyrolysis as a function of temperature using diffuse reflection infrared Fourier transform spectroscopy (DRIFTS). The majority of the functional groups were found to have disappeared by a temperature of 800 °C, with most of the mass loss occurring between 350 and 520 °C. Thermogravimetric analysis (TGA) was used to measure the loss of mass as the pyrolysis temperature was increased, and the observed pyrolysis rates were compared to estimates of such rates from the DRIFTS analysis. Our proposed synthesis route provides a scalable and solventless method of producing SiC-type ceramic films for such applications as high-temperature sensors and membranes.