Fabrication of silicon on insulator wafer with silicon carbide insulator layer by surface-activated bonding at room temperature

Abstract

We propose a process for the fabrication of a silicon-on-insulator (SOI) wafer with a silicon carbide (SiC) insulator layer by combining plasma-enhanced chemical vapor deposition and surface-activated bonding without thermal stress to obtain sufficient thermal conductivity for self-heating power and high-frequency device applications. The thermal conductivity of the deposited SiC layer is twice that of a silicon dioxide (SiO2) layer, and the breakdown electric field of this layer is 10–11 MV cm−1, the same as that of a SiO2 layer. In addition, the bonding interface between the silicon layer and the deposited SiC insulator layer has no voids or punch-out dislocations. Therefore, the SOI wafer with a SiC layer has high thermal conductivity and breakdown electric field; this SOI wafer and its fabrication process will be important for the realization of next-generation self-heating devices such as power and high-frequency devices.

Phase transformation on HZO ferroelectric layer in ferroelectric random-access memory induced by x-ray irradiation

“…Figures 4(a) and (b) respectively show the I-V and the C-V characteristic curves of both devices before the wake-up process. According to previous studies, it is noted that the grain boundaries (GBs) would further result in the leakage current [24][25][26]. Therefore, it can be speculated that the initial leakage current may mainly originate from the leakage path resulting from the GBs, as shown by the black solid line in figure 4(a).…”

The Janus Nature of Nanohydroxyapatite in Tumor Progression

“…[ 147 ] Chitosan and sodium alginate were used to modify the surface of the nanoworms using a layer‐by‐layer technique for enhancing solubility and biocompatibility. [ 148 ] The magnetic properties of the magnetically assembled nanomaterials were enhanced by increasing the content of Fe 3 O 4 nanocrystals, which, in turn, improved MRI performance. After intravenous injection of the nHAP‐ION nanoworms, the contrast of MRI of liver in vivo was significantly higher.…”

Effect of Combined Hydrophilic Activation on Interface Characteristics of Si/Si Wafer Direct Bonding

“…Wafer direct bonding can combine two mirror-polished wafers together by van der Waals forces, and then form strong chemical bonds without any intermediate material between surfaces. It has gained remarkable attention in the fields of three-dimensional (3D) integration [1], micro-electro-mechanical systems (MEMS) [2], optoelectronic and photonic devices [3][4][5], fabrication of silicon-on-insulator (SOI) and III-V compounds-on-insulator (such as GeOI and InGaSbOI) substrates [6][7][8].…”