Fabrication of single crystal field-effect transistors with phenacene-type molecules and their excellent transistor characteristics

et al. 2014

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A new phenacene-type molecule, [8]phenacene, which is an extended zigzag chain of coplanar fused benzene rings, has been synthesised for use in an organic field-effect transistor (FET). The molecule consists of a phenacene core of eight benzene rings, which has a lengthy π-conjugated system. The structure was verified by elemental analysis, solid-state NMR, X-ray diffraction (XRD) pattern, absorption spectrum and photoelectron yield spectroscopy (PYS). This type of molecule is quite interesting, not only as pure chemistry but also for its potential electronics applications. Here we report the physical properties of [8]phenacene and its FET application. An [8]phenacene thin-film FET fabricated with an SiO2 gate dielectric showed clear p-channel characteristics. The highest μ achieved in an [8]phenacene thin-film FET with an SiO2 gate dielectric is 1.74 cm2 V−1 s−1, demonstrating excellent FET characteristics; the average μ was evaluated as 1.2(3) cm2 V−1 s−1. The μ value in the [8]phenacene electric-double-layer FET reached 16.4 cm2 V−1 s−1, which is the highest reported in EDL FETs based on phenacene-type molecules; the average μ was evaluated as 8(5) cm2 V−1 s−1. The μ values recorded in this study show that [8]phenacene is a promising molecule for transistor applications.

Section: Resultsmentioning

confidence: 67%

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confidence: 95%

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confidence: 99%

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An Extended Phenacene-type Molecule, [8]Phenacene: Synthesis and Transistor Application

Okamoto

Eguchi

et al. 2014

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“…Here it is important to notice that a 3 nm layer of F 4 TCNQ is inserted between the electrodes and the thin film. This should provide a small Schottky barrier height (or a small contact resistance) and a low | V th | as reported previously for organic single-crystal FETs27.…”

Section: Discussionmentioning

confidence: 64%

Transistor application of alkyl-substituted picene

Okamoto

Goto

et al. 2014

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Field-effect transistors (FETs) were fabricated with a thin film of 3,10-ditetradecylpicene, picene-(C14H29)2, formed using either a thermal deposition or a deposition from solution (solution process). All FETs showed p-channel normally-off characteristics. The field-effect mobility, μ, in a picene-(C14H29)2 thin-film FET with PbZr0.52Ti0.48O3 (PZT) gate dielectric reached ~21 cm2 V−1 s−1, which is the highest μ value recorded for organic thin-film FETs; the average μ value (<μ>) evaluated from twelve FET devices was 14(4) cm2 V−1 s−1. The <μ> values for picene-(C14H29)2 thin-film FETs with other gate dielectrics such as SiO2, Ta2O5, ZrO2 and HfO2 were greater than 5 cm2 V−1 s−1, and the lowest absolute threshold voltage, |Vth|, (5.2 V) was recorded with a PZT gate dielectric; the average |Vth| for PZT gate dielectric is 7(1) V. The solution-processed picene-(C14H29)2 FET was also fabricated with an SiO2 gate dielectric, yielding μ = 3.4 × 10−2 cm2 V−1 s−1. These results verify the effectiveness of picene-(C14H29)2 for electronics applications.

“…Field-effect transistors (FETs) using thin films and single crystals of phenacene-type molecules (extended W-patterned structures of fused benzene rings) have been extensively studied using various gate dielectrics123456789101112131415161718. The highest field-effect mobility ( μ ) reported in these phenacene thin-film FETs is currently 21 cm 2 V −1 s −1 .…”

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confidence: 99%

Transistor Properties of 2,7-Dialkyl-Substituted Phenanthro[2,1-b:7,8-b′]dithiophene

Kubozono

Hyodo

et al. 2016

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A new phenacene-type molecule with five fused aromatic rings was synthesized: 2,7-didodecylphenanthro[2,1-b:7,8-b′]dithiophene ((C12H25)2-i-PDT), with two terminal thiophene rings. Field-effect transistors (FETs) using thin films of this molecule were fabricated using various gate dielectrics, showing p-channel normally-off FET properties with field-effect mobilities (μ) greater than 1 cm2 V−1 s−1. The highest μ value in the thin-film FETs fabricated in this study was 5.4 cm2 V−1 s−1, when a 150 nm-thick ZrO2 gate dielectric was used. This implies that (C12H25)2-i-PDT is very suitable for use in a transistor. Its good FET performance is fully discussed, based on electronic/topological properties and theoretical calculations.