Fabrication of SnS nanowalls via pulsed plasma-enhanced chemical vapor deposition using a metal–organic single-source precursor

Abstract

Vaporization of the solid bis(diethyldithiocarbamato)tin(ii) into pulsed RF plasma leads to the growth of crystalline, highly conductive SnS nanowalls.

Novel Self-Powered Photodetector with Binary Photoswitching Based on SnSx/TiO2 Heterojunctions

“…The optical band gap energy is 3.0 eV for TiO 2 NRs, in agreement with the reported literature. − The optical band gap energy is 2.12, 1.89, and 1.29 eV for SnS x nanoflakes grown for 30, 45, and 60 min, respectively. The decreased optical band gap energy is attributed to the increased SnS phase with the low band gap. ,,, The SnS phase induces the redshift of the absorption spectra and enhances visible light harvesting.…”

“…The process was reported in our previous paper. 31 SnS x nanoflakes on TiO 2 NRs substrates were synthesized by chemical both deposition (CBD) for different deposition times (30,45, and 60 min). The 0.01 mol tin chloride dihydrate (SnCl 2 •2H 2 O) and 0.03 mol of thioacetamide (CH 3 CSNH 2 , TAA) were added to 100 mL of isopropanol successively under stirring at 85 °C.…”

Vertically Aligned Graphene‐Analogous Low‐Dimensional Materials: A Review on Emerging Trends, Recent Developments, and Future Perspectives

“…Edge effects in vertically aligned 2D layered materials are predicted and experimentally verified to play a significant role in its tunable electrical properties. [75][76][77][78][79] Kumar and Viswanath evaluated the carrier transport of the vertically 2D MoS 2 layers by two probe method and compared it with a horizontally grown MoS 2 monolayer. [36] The sheet resistance of MoS 2 vertical films is reported to be three orders of magnitude higher than the single-layer horizontal MoS 2 flakes.…”

“…[81] Edge effects are predicted to play a significant role in the electrical properties of 2H MoS 2 with the transformation from semiconducting to metallic nature with a resistivity of ≈2 Ω m. [75] Comparative I-V characteristic measurements of SnS vertical thin and thick nanowall arrays, SnS/ SnS 2 heterostructure nanowalls, and stacked SnS structures were investigated with mercury droplet contact. [77] Calculated [63] Copyright 2014, American Chemical Society. d) The heterostructure consists of the MoS 2 and WSe 2 , in which their vdWs layers are aligned perpendicular to the substrate.…”

“…[ 81 ] Edge effects are predicted to play a significant role in the electrical properties of 2H MoS 2 with the transformation from semiconducting to metallic nature with a resistivity of ≈2 Ω m. [ 75 ] Comparative I – V characteristic measurements of SnS vertical thin and thick nanowall arrays, SnS/SnS 2 heterostructure nanowalls, and stacked SnS structures were investigated with mercury droplet contact. [ 77 ] Calculated specific conductivity of the stacked SnS layers is found to be 26 S m –1 whereas for the vertical SnS nanowalls it is 260 S m –1 . It is demonstrated that the charge transport through a dense network of very thin nanowalls is much more efficient as compared to the charge transport through stacked SnS.…”