Fabrication of strained Ge film using a thin SiGe virtual substrate

Guo, Linna; Zhao, Shengdun; Wang, Jing; Liu, Zhihong; Xu, Jun

doi:10.1088/1674-4926/30/9/093005

Cited by 7 publications

(3 citation statements)

References 24 publications

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“…The devices were bulk Si and biaxial s-Si p-MOSFETs. In fabricating the strained Si MOSFETs, 3 µm thick compositionally graded SiGe buffers were first deposited on (001) Si wafers, in which the Ge fraction increases linearly from 0 to 20% as reported in previous work [10] , and then a 0.8 µm thick Si 0.8 Ge 0.2 and 12 nm strained Si layer was grown. The Raman spectrum showed that the tensile strain in s-Si was 0.8%, which means the stress is 1.4 GPa (for an elastic modulus of 181 GPa for (001) Si [11] ).…”

Section: Sample Preparationmentioning

confidence: 99%

Impacts of additive uniaxial strain on hole mobility in bulk Si and strained-Si p-MOSFETs

Zhao¹,

Lei²,

Wang³

et al. 2009

J. Semicond.

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Hole mobility changes under uniaxial and combinational stress in different directions are characterized and analyzed by applying additive mechanical uniaxial stress to bulk Si and SiGe-virtual-substrate-induced strained-Si (s-Si) p-MOSFETs (metal-oxide-semiconductor field-effect transistors) along (110) and (100) channel directions. In bulk Si, a mobility enhancement peak is found under uniaxial compressive strain in the low vertical field. The combination of (100) direction uniaxial tensile strain and substrate-induced biaxial tensile strain provides a higher mobility relative to the (110) direction, opposite to the situation in bulk Si. But the combinational strain experiences a gain loss at high field, which means that uniaxial compressive strain may still be a better choice. The mobility enhancement of SiGe-induced strained p-MOSFETs along the (110) direction under additive uniaxial tension is explained by the competition between biaxial and shear stress.

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Section: Sample Preparationmentioning

confidence: 99%

Impacts of additive uniaxial strain on hole mobility in bulk Si and strained-Si p-MOSFETs

Zhao¹,

Lei²,

Wang³

et al. 2009

J. Semicond.

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“…However, to realize an efficient light emitter and detector, a significantly thicker strained film is highly desirable. Relaxed Si 0.45 Ge 0.55 (RSG) virtual substrates, with a thick graded SiGe buffer layer has been explored as an alternative to Si for the growth of epitaxial strained Ge films with relatively higher thickness [20]. The use of surfactants can lead to further increase in the layer thickness without islanding in epitaxially grown films [21,22].…”

Section: Introductionmentioning

confidence: 99%

Room temperature direct band gap emission characteristics of surfactant mediated grown compressively strained Ge films

et al. 2016

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Compressively strained Ge films have been grown on relaxed SiGe virtual substrates using molecular beam epitaxy in the presence of Sb as a surfactant. Structural characterization has shown that films grown in the presence of surfactant exhibit very smooth surfaces with a relatively higher strain value in comparison to those grown without any surfactant. The variation of strain with increasing Ge layer thickness was analyzed using Raman spectroscopy. The strain is found to be reduced with increasing film thickness due to the onset of island nucleation following Stranski-Krastanov growth mechanism. No phonon assisted direct band gap photoluminescence from compressively strained Ge films grown on relaxed SiGe has been achieved up to room temperature. Excitation power and temperature dependent photoluminescence have been studied in details to investigate the origin of different emission sub-bands.

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“…In recent years several interesting approaches have been investigated to address this challenge. A direct approach is the enhancement of the carrier mobility by means of introducing strain into the Si channel (1,2). This idea has resulted in significant improvement and, hence, is now adopted into the CMOS process.…”

Section: Introductionmentioning

confidence: 99%

Fabrication of Relaxed Germanium on Insulator via Room Temperature Wafer Bonding

et al. 2014

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We report on the fabrication of, high quality, monocrystalline relaxed Germanium with ultra-low roughness on insulator (GeOI) using low-temperature direct wafer bonding. We observe that a two-step epitaxially grown germanium film fabricated on silicon by reduced pressure chemical vapor deposition can be directly bonded to a SiO2 layer using a thin Al2O3 as bonding mediator. After removing the donor substrate silicon the germanium layer exhibits a complete relaxation without degradation in crystalline quality and no stress in the film. . The results suggest that the fabricated high quality GeOI substrate is a suitable platform for high performance device applications.

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Fabrication of strained Ge film using a thin SiGe virtual substrate

Cited by 7 publications

References 24 publications

Impacts of additive uniaxial strain on hole mobility in bulk Si and strained-Si p-MOSFETs

Impacts of additive uniaxial strain on hole mobility in bulk Si and strained-Si p-MOSFETs

Room temperature direct band gap emission characteristics of surfactant mediated grown compressively strained Ge films

Fabrication of Relaxed Germanium on Insulator via Room Temperature Wafer Bonding

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