Fabrication of Sub-25 nm Diameter GaSb Nanopillar Arrays by Nanoscale Self-Mask Effect

Lin, Tzu-ging; Ramadurgam, Sarath; Liao, Chang; Zi, Yunlong; Yang, Chen

doi:10.1021/acs.nanolett.5b00967

Cited by 12 publications

(14 citation statements)

References 51 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Lin et al reported a self-mask RIE method to create a GaSb nanopillar below 25 nm [70]. A partially-formed oxide layer was formed on top of the GaSb substrate while being exposed to oxygen plasma which acted as a mask to slow down the etching rate of the protected area.…”

Section: Top-downmentioning

confidence: 99%

See 1 more Smart Citation

Recent advances in III-Sb nanowires: from synthesis to applications

Yip

Shen

2019

Nanotechnology

View full text Add to dashboard Cite

The excellent properties of III-V semiconductors make them intriguing candidates for nextgeneration electronics and optoelectronics. Their nanowire (NW) counterparts further provide interesting geometry and a quantum confinement effect which benefits various applications. Among the many members of all the III-V semiconductors, III-antimonide NWs have attracted significant research interest due to their narrow, direct bandgap and high carrier mobility. However, due to the difficulty of NW fabrication, the development of III-antimonide NWs and their corresponding applications are always a step behind the other III-V semiconductors. Until recent years, because of advances in understanding and fabrication techniques, electronic and optoelectronic devices based on III-antimonide NWs with novel performance have been fabricated. In this review, we will focus on the development of the synthesis of III-antimonide NWs using different techniques and strategies for fine-tuning the crystal structure and composition as well as fabricating their corresponding heterostructures. With such development, the recent progress in the applications of III-antimonide NWs in electronics and optoelectronics is also surveyed. All these discussions provide valuable guidelines for the design of III-antimonide NWs for next-generation device utilization.

show abstract

Section: Top-downmentioning

confidence: 99%

mentioning

confidence: 99%

Recent advances in III-Sb nanowires: from synthesis to applications

Yip

Shen

2019

Nanotechnology

View full text Add to dashboard Cite

show abstract

“…In the past decades, 'bottom-up' approach has become more popular for controllable growth of the expected Sb-based III-V NWs with large material diversity and good control over diameter, stoichiometry and doping. [42]. As shown in figure 2(a), the partially formed oxide on the surface of GaSb serves as a mask, and the unprotected GaSb substrate will be etched away, resulting in surface nanostructure.…”

Section: Recent Advances In the Synthesis Of Sb-based Iii-v Nwsmentioning

confidence: 99%

“…In the various proposed resolutions, developing NW field-effect transistors (NWFETs) with high hole mobility channel materials has been one of the optimal choices [33][34][35]. With the highest hole mobility of 1000 cm 2 V −1 s −1 among all III-V semiconductors [12,[36][37][38][39][40], GaSb NWs has been regarded as the potential substitution of p-type Si in the low-power and high speed FETs [41,42]. With a diameter around 10 nm, Yang et al demonstrated that the hole mobility of 111 á ñ-oriented GaSb NWs can reach ∼200 cm 2 V −1 s −1 [43].…”

Section: Introductionmentioning

confidence: 99%

Recent advances in Sb-based III–V nanowires

et al. 2019

View full text Add to dashboard Cite

Owing to the high mobility, narrow bandgap, strong spin-orbit coupling and large g-factor, Sbbased III-V nanowires (NWs) attracted significant interests in high speed electronics, longwavelength photodetectors and quantum superconductivity in the past decade. In this review, we aim to give an integrated summarization about the recent advances in binary as well as ternary Sb-based III-V NWs, starting from the fundamental properties, NWs growth mechanism, typical synthetic methods to their applications in transistors, photodetectors, and Majorana fermions detection. Up to now, famous NWs growth techniques of solid-source chemical vapor deposition (CVD), molecular beam epitaxy, metal organic vapor phase epitaxy and metal organic CVD etc have been adopted and developed for the controllable growth of Sb-based III-V NWs. Several parameters including heating temperature, III/V ratio of source materials, growth temperature, catalyst size and kinds, and growth substrate play important roles on the morphology, position, diameter distribution, growth orientation and crystal phase of Sb-based III-V NWs. Furthermore, we discuss the photoelectrical applications of Sb-based III-V NWs such as field-effecttransistors, tunnel diode, low-power inverter, and infrared detectors etc. Importantly, due to the strongest spin-orbit interaction and giant g-factor among all III-V semiconductors, InSb with the geometry of one-dimension NW is considered as the most promising candidate for the detection of Majorana fermions. In the end, we also summarize the main challenges remaining in the field and put forward some suggestions for the future development of Sb-based III-V NWs.

show abstract

“…Silicon wafers were chosen here because it is the most commonly used substrate in nanostructure fabrication. As reported before, diameters of the resulted nanoprotrusions were determined by the size of SiO 2 nanoparticles and the height was controlled by the RIE etching time. The density of nanoprotrusions on the surface was varied by changing the concentration of SiO 2 nanoparticle solution.…”

Section: Resultsmentioning

confidence: 96%

Nanoladders Facilitate Directional Axonal Outgrowth and Regeneration

Huang

Jiang

et al. 2018

ACS Biomater. Sci. Eng.

Self Cite

View full text Add to dashboard Cite

After injuries, axonal regeneration over long distance is challenging due to lack of orientation guidance. Biocompatible scaffolds have been used to mimic the native organization of axons to guide and facilitate axonal regeneration. Those scaffolds are of great importance in achieving functional connections of the nervous system. We have developed a nanoladder scaffold to guide directional outgrowth and facilitate regeneration of axons. The nanoladders, composed of micron-scale stripes and nanoscale protrusions, were fabricated on the glass substrate using photolithography and reactive ion etching methods. Embryonic neurons cultured on the nanoladder scaffold showed significant neurite elongation and axonal alignment in parallel with the nanoladder direction. Furthermore, the nanoladders promoted axonal regeneration and functional connection between organotypic spinal cord slices over 1 mm apart. Multimodality imaging studies revealed that such neuronal regeneration was supported by directional outgrowth of glial cells along nanoladders in the organotypic spinal cord slice culture as well as in the coculture of glial cells and neurons. These results collectively herald the potential of our nanoladder scaffold in facilitating and guiding neuronal development and functional restoration.

show abstract

Fabrication of Sub-25 nm Diameter GaSb Nanopillar Arrays by Nanoscale Self-Mask Effect

Cited by 12 publications

References 51 publications

Recent advances in III-Sb nanowires: from synthesis to applications

Recent advances in III-Sb nanowires: from synthesis to applications

Recent advances in Sb-based III–V nanowires

Nanoladders Facilitate Directional Axonal Outgrowth and Regeneration

Contact Info

Product

Resources

About