2002
DOI: 10.1063/1.1521583
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Fabrication of submicron-scale SrTiO3−δ devices by an atomic force microscope

Abstract: By applying a negative voltage to the conducting tip of an atomic force microscope, we modify on submicron-scale semiconducting oxygen deficient SrTiO3−δ thin films grown on LaAlO3 substrates. In comparison with the as-grown film, the modified regions present different electrical and structural properties, which can be exploited to realize submicrometer circuits. After a discussion on the mechanisms of the process, we report a prototype of a SrTiO3−δ-based sidegate field-effect transistor, showing a 4% modulat… Show more

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Cited by 77 publications
(56 citation statements)
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“…Strontium titanate, SrTiO 3 , a typical ternary perovskite-type oxide with large nonlinear optical coefficients and dielectric constants, has attracted considerable attention because of its wide applications in the field of nonlinear optics, thin-film capacitors, oxygen gas sensors, optical memories, and electrooptic modulators [14][15][16][17][18][19]. Moreover, SrTiO 3 is also an important n-type semiconductor with a basic framework of Ti-O polyhedron as TiO 2 .…”
Section: Introductionmentioning
confidence: 99%
“…Strontium titanate, SrTiO 3 , a typical ternary perovskite-type oxide with large nonlinear optical coefficients and dielectric constants, has attracted considerable attention because of its wide applications in the field of nonlinear optics, thin-film capacitors, oxygen gas sensors, optical memories, and electrooptic modulators [14][15][16][17][18][19]. Moreover, SrTiO 3 is also an important n-type semiconductor with a basic framework of Ti-O polyhedron as TiO 2 .…”
Section: Introductionmentioning
confidence: 99%
“…The idea that cations at the surface of the thin film may react with water, forming hydroxides, which readily decompose in the electric field, was proposed before. It is possible to remove the YBa 2 Cu 3 O 7−␦ thin films locally using a STM tip and a bias voltage of 1.5 V. 49 In the case of the SrTiO 3 thin films, ridges of several nanometer high were formed using a conductive AFM tip and a negative bias voltage in the range of 10-30 V. 50 In both cases transport of a large amount of material is thought to be possible due to the formation and decomposition of Ba͑OH͒ 2 and Sr͑OH͒ 2 .…”
Section: -8mentioning
confidence: 99%
“…By increasing air humidity and applied voltage over a defined threshold a change in channel resistivity appears and, if the voltage is high enough, the vanishing of the current along the channel is observed [15]. AFM imaging of the channel after these operations indicate the appearance of a surface overgrowth in the regions subjected to the tip field.…”
Section: Resultsmentioning
confidence: 97%
“…Statistics done by performing scan lines in different conditions reveal that the height of the surface overgrowth increases with increasing applied voltage [15] to a limit value which is nearly equal to the film thickness. On the other end the efficiency of the growth and the width of the lines depends deeply on air humidity [16].…”
Section: Resultsmentioning
confidence: 98%