2021
DOI: 10.1016/j.matpr.2020.05.475
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Fabrication of superparamagnetic permalloy nanostructures in ZnO matrix by ion beam sputtering

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Cited by 3 publications
(3 citation statements)
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“…Tungsten thin films were sputtered onto silicon (100) substrates using ion beam sputtering at ambient temperature. 21 Prior to sputtering, the silicon substrates were ultrasonically washed for 5 min in acetone, ethanol, and finally deionized water (18.2 MΩ cm resistivity). Ion beam sputtering was performed at 4 × 10 −6 mbar using an argon ion beam (15 kV, 0.3 mA) directed toward a tungsten target (99.99% pure) inclined at a 45°angle to the beam.…”
Section: Methodsmentioning
confidence: 99%
See 1 more Smart Citation
“…Tungsten thin films were sputtered onto silicon (100) substrates using ion beam sputtering at ambient temperature. 21 Prior to sputtering, the silicon substrates were ultrasonically washed for 5 min in acetone, ethanol, and finally deionized water (18.2 MΩ cm resistivity). Ion beam sputtering was performed at 4 × 10 −6 mbar using an argon ion beam (15 kV, 0.3 mA) directed toward a tungsten target (99.99% pure) inclined at a 45°angle to the beam.…”
Section: Methodsmentioning
confidence: 99%
“…Tungsten thin films were sputtered onto silicon (100) substrates using ion beam sputtering at ambient temperature . Prior to sputtering, the silicon substrates were ultrasonically washed for 5 min in acetone, ethanol, and finally deionized water (18.2 MΩ cm resistivity).…”
Section: Experimental Sectionmentioning
confidence: 99%
“…IBS was conducted at 4 × 10 −6 mbar using a Mo target (99.99% purity) and an Ar + beam (15 kV, 0.4 mA). The target and collection angles were 45°and 60°, respectively, following the work of Mahendra et al 21 Ion implantation was conducted using a Penning ion source with carbon monoxide as a precursor gas. 22 Using magnetic mass separation, C + ions were implanted into the Mo films at a pressure of 1 × 10 −7 mbar.…”
Section: Synthesis and Characterizationmentioning
confidence: 99%