Fabrication of surface‐oxidized GaN crystallites for UV electroluminescent devices

Abstract

The cathodoluminescence (CL) of GaN crystallites with and without surface oxide layers is reported. The CL intensity of the coated GaN crystallites is higher than that of the crystallites without oxide layers although the shapes of the coated GaN crystallites are similar to those of uncoated GaN crystallites. The surface coating with gallium oxide is effective for the reduction of surface recombination in GaN crystallites. Electroluminescent devices (ELDs) using GaN crystallites covered with gallium oxides were fabricated. UV light emission was observed from the GaN‐based ELDs at RT. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)