Fabrication of TaS2 nanobelt arrays and their enhanced field-emission

Wu, Xingxin; Tao, Yong; Gao, Qi-Xiu

doi:10.1039/b913935d

Cited by 18 publications

(10 citation statements)

References 18 publications

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“…Its initial metallicity and, thus, electrical conductivity can lead to potential applications such as a light-responsive active electrode in the HER and photosensing. Albeit the study of TaS 2 is mainly focused on the superconductivity [22][23][24] , field emission 25,26 , photo-induced features of the material for HER and photosensing have not been explored yet. Aiming to enhance the photoresponse performance of the TaS 2 , the quality and dimensions of the material must be considered.…”

Section: Introductionmentioning

confidence: 99%

Photocatalytic activity of twist-angle stacked 2D TaS2

et al. 2021

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The low-cost, efficient photoelectrosensitive electrodes as an alternative to expensive and complex rigid systems are yet in demand for advanced photoresponsive technology. Here, the light-induced efficiency of electrochemically exfoliated TaS2 nanosheets for hydrogen generation catalysis and photodetectors was demonstrated. Mutual twisting of the exfoliated 2H-TaS2 flakes leads to the redistribution of charge density induced by interlayer interaction of the individual nanosheets. External light irradiation on the TaS2 surface influences its conductivity making the material feasible for photoelectrocatalysis and photodetection. The TaS2-based photoelectrocatalyst demonstrates high hydrogen evolution reaction (HER) activity with the onset overpotential below 575 mV vs. reversible hydrogen electrode (RHE). The TaS2-integrated photodetector in the acidic medium represents its broadband response with the highest photoresponsivity (0.62 mA W−1) toward 420 nm light illumination. This finding will pave the way to a new realization of exfoliated twist-angle stacked TaS2 for photo-induced electrochemistry and sensing.

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Section: Introductionmentioning

confidence: 99%

Photocatalytic activity of twist-angle stacked 2D TaS2

et al. 2021

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“…Nowadays, various types of nanobelts 13,14 have been synthesized via different routes and potentially applied in many important areas, such as lasers, 15 electromechanical devices, 6 sensors 12 and light/field emission devices. 16,17 Silicon nitride (Si 3 N 4 ) is an important wide-band gap (5.3 eV) semiconductor with many excellent thermal and mechanical properties, such as high mechanical strength, good thermal/ chemical stability, as well as high doping limit, 18,19 and thus could be widely used as a structural material for high-temperature applications and as a dielectric material for microelectronic and optoelectronic applications. 18 The 1D Si 3 N 4 -nanostructured materials are attractive due to their peculiar morphology and size effects.…”

Section: Introductionmentioning

confidence: 99%

Orientation- and passivation-dependent stability and electronic properties of α-Si₃N₄nanobelts

Dai

Zhong

et al. 2014

Phys. Chem. Chem. Phys.

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The energetic stability and electronic properties of unpassivated, hydrogen (-H) and hydroxyl (-OH) passivated α-Si3N4 nanobelts orientating along the [101], [210], [011], [100], [001], and [110] directions are investigated by first-principles calculations. Calculations show that the energetic stabilities of α-Si3N4 nanobelts depend weakly upon orientations of nanobelts, but sensitively on passivation treatments. The most stable nanobelt is the OH cluster partially passivated α-Si3N4, followed by the H atom fully passivated and the unpassivated systems. All the unpassivated nanobelts show metallic characteristics due to the presence of dangling bonds of surficial atoms in nanobelts, while all the passivated nanobelts exhibit semiconducting characteristics. The valence band maximum (VBM) and the conduction band minimum (CBM) mainly originate from the surface N-2p and Si-3p states, respectively. For α-Si3N4 nanobelts orientating along [101], [210], [011] and [110] directions, the OH passivated systems exhibit a much smaller band gap than the H passivated systems, while the [100] and [001] orientated nanobelts exhibit the opposite band-gap properties.

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“…One-dimensional (1D) nanostructures have attracted considerable attention since the discovery of carbon nanotubes in 1991 1 2 3 4 5 6 7 8 . Their unique morphologies as well as excellent properties make them potentially applicable to many important areas, such as nanoelectronics 2 , energy conversion and storage 9 10 , lasers 11 , chemical sensing and catalysis 12 , and light/field emission devices 13 14 15 . Differently from its cylindrical counterparts (e.g., nanowire, nanorod and nanotube), a nanobelt possesses a rectangle-like cross section with a high width-to-thickness ratio, providing the nanodevice with a large operable and workable surface, and potentially exhibiting some novel phonon-electron-photon transport properties 16 17 , which is of great benefit for developing new generation high-performance nanodevices.…”

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confidence: 99%

Fe-catalyzed growth of one-dimensional α-Si3N4 nanostructures and their cathodoluminescence properties

Huang

Shuai

et al. 2013

Sci Rep

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Preparation of nanomaterials with various morphologies and exploiting their novel physical properties are of vital importance in nanoscientific field. Similarly to the III-N compound semiconductors, Si3N4 nanostructures also could be potentially used for making optoelectronic devices. In this paper, we report on an improved Fe-catalyzed chemical vapour deposition method for synthesizing ultra-long α-Si3N4 nanobelts along with a few nanowires and nanobranches on a carbon felt substrate. The ultra-long α-Si3N4 nanobelts grew via a combined VLS-base and nanobranches via a combined double-stage VLS-base and VS-tip mechanism, as well as nanowires via VLS-tip mechanism. The three individual nanostructures showed variant optical properties as revealed by a cathodoluminescence spectroscopy. A single α-Si3N4 nanobelt or nanobranch gave a strong UV-blue emission band as well as a broad red emission, whereas a single α-Si3N4 nanowire exhibited only a broad UV-blue emission. The results reported would be useful in developing new photoelectric nanodevices with tailorable or tunable properties.

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Fabrication of TaS2 nanobelt arrays and their enhanced field-emission

Cited by 18 publications

References 18 publications

Photocatalytic activity of twist-angle stacked 2D TaS2

Photocatalytic activity of twist-angle stacked 2D TaS2

Orientation- and passivation-dependent stability and electronic properties of α-Si₃N₄nanobelts

Fe-catalyzed growth of one-dimensional α-Si3N4 nanostructures and their cathodoluminescence properties

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Fabrication of TaS2 nanobelt arrays and their enhanced field-emission

Cited by 18 publications

References 18 publications

Photocatalytic activity of twist-angle stacked 2D TaS2

Photocatalytic activity of twist-angle stacked 2D TaS2

Orientation- and passivation-dependent stability and electronic properties of α-Si3N4nanobelts

Fe-catalyzed growth of one-dimensional α-Si3N4 nanostructures and their cathodoluminescence properties

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Orientation- and passivation-dependent stability and electronic properties of α-Si₃N₄nanobelts