Fabrication of thin diamond membranes by <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" altimg="si1.svg"><mml:msup><mml:mrow><mml:mrow><mml:mi mathvariant="normal">Ne</mml:mi></mml:mrow></mml:mrow><mml:mo>+</mml:mo></mml:msup></mml:math> implantation

Basso, Luca; Titze, Michael; Henshaw, Jacob; Kehayias, Pauli; Cong, Rong; Ziabari, Maziar Saleh; Lu, Tzu-Ming; Lilly, Michael P.; Mounce, Andrew M.

doi:10.1016/j.giant.2024.100238

Cited by 3 publications

(1 citation statement)

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“…The nature and properties of implantation-induced damage in diamond has recently received renewed interest. It is due to the major means of formation of thin diamond membranes for the formation of conductive regions in diamond, and of formation of specific optically active impurity-vacancy complexes [6]. As previously mentioned, diamond is a unique material owing to its thermodynamic instability.…”

Section: Introductionmentioning

confidence: 99%

Spectral and microstructural analysis of the effect of the Ga⁺ implantation on diamond: a CL-EELS study

Valendolf,

Piñero,

Lloret

et al. 2024

Nanotechnology

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Due to its capacity to achieve nanometer-scale machining and lithography, focused ion beam (FIB) is an extended tool for semiconductor device fabrication and development, in particular, for diamond-based devices. However, some technological steps are still not fully optimized for its use. Indeed, ion implantation seems to affect the crystalline structure and electrical properties of diamond. For this study, a boron-doped ([B] ~ 1017 atoms·cm-3) diamond layer grown by CVD was irradiated using Ga+ by FIB, with 1nA current and 5, 20, and 30 keV of acceleration voltage. The Ga+ implanted diamond layer has been analysed through cathodoluminescence (CL) and scanning transmission electron microscopy (STEM)-related techniques. The beam penetration depth has been simulated by Monte Carlo calculations of both Ga+ (FIB) and e- (CL) beams at different energies. The comparative CL analysis of the layer as-grown and after implantation revealed peaks related to defects, such as A band, H3 center, and defects present in the green band region. The STEM studies for the 30 keV implanted sample showed that the diamond lattice is affected by the damage, evidencing amorphisation in the layer with a sp2/sp3 ratio of 1.37, estimated by EELS. Therefore, this study highlights the effects of the Ga+ implantation on the optical and structural characteristics of diamond, using different methods.

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Section: Introductionmentioning

confidence: 99%

Spectral and microstructural analysis of the effect of the Ga⁺ implantation on diamond: a CL-EELS study

Valendolf,

Piñero,

Lloret

et al. 2024

Nanotechnology

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Inducing controlled blistering by Smart-CutTM process in semiconducting diamond: A STEM study

Piñero,

Fernández,

Lloret

et al. 2025

Applied Surface Science

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Creation of diamond membranes containing nitrogen-vacancy centers by means of ion irradiation

Scheuner,

Kuhrke,

Lühmann

et al. 2024

Journal of Applied Physics

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In this study, we investigated the creation of mono crystalline diamond membranes for use in two-dimensional optical cavities. The creation method involves ion irradiation to create a buried layer of damaged material that is removed to leave a free-standing mono crystalline top layer. Simulations were used to determine the optimal parameters for irradiation, which were tested in experiments. Hydrogen ions were found to be the optimal ion species for irradiation, and long-term high-temperature annealing was beneficial in reducing ion-induced damage in the membrane. The resulting membranes, which were 300 nm thick, contained a high density of negatively charged nitrogen-vacancy centers. Their optical and spin properties were analyzed. The findings of this study can be applied to the creation of diamond membranes hosting other color centers, with thicknesses matched to their respective fluorescence.

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Fabrication of thin diamond membranes by Ne+ implantation

Cited by 3 publications

References 54 publications

Spectral and microstructural analysis of the effect of the Ga⁺ implantation on diamond: a CL-EELS study

Spectral and microstructural analysis of the effect of the Ga⁺ implantation on diamond: a CL-EELS study

Inducing controlled blistering by Smart-CutTM process in semiconducting diamond: A STEM study

Creation of diamond membranes containing nitrogen-vacancy centers by means of ion irradiation

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Fabrication of thin diamond membranes by Ne+ implantation

Cited by 3 publications

References 54 publications

Spectral and microstructural analysis of the effect of the Ga+ implantation on diamond: a CL-EELS study

Spectral and microstructural analysis of the effect of the Ga+ implantation on diamond: a CL-EELS study

Inducing controlled blistering by Smart-CutTM process in semiconducting diamond: A STEM study

Creation of diamond membranes containing nitrogen-vacancy centers by means of ion irradiation

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Spectral and microstructural analysis of the effect of the Ga⁺ implantation on diamond: a CL-EELS study

Spectral and microstructural analysis of the effect of the Ga⁺ implantation on diamond: a CL-EELS study