Fabrication of TiO2-based transparent conducting oxide on glass and polyimide substrates

Hitosugi, Taro; Yamada, Naoomi; Hoang, Ngoc Lam Huong; Kasai, Junpei; Nakao, Shin-ichi; Shimada, Toshihiro; Hasegawa, Tetsuya

doi:10.1016/j.tsf.2008.11.090

Cited by 39 publications

(20 citation statements)

References 15 publications

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“…4͑a͒, film resistivities tended to have minimum values in the range 10 −3 ⍀ cm for very low f͑O 2 ͒, approximately 0.01%, where H had reasonable values 11,25,27-30 around 1 -8 cm 2 / V s, as shown in Fig. The experimental observation that very low f͑O 2 ͒ was necessary for obtaining low is fairly consistent with previous experimental reports 11,25,[27][28][29][30] and a prediction 26 that the formation energy of Nb 5+ on Ti 4+ site ͑Nb Ti + ͒ decreases by decreasing the oxygen activity during the deposition ͑Ti-rich, O-poor deposition conditions͒. The experimental observation that very low f͑O 2 ͒ was necessary for obtaining low is fairly consistent with previous experimental reports 11,25,[27][28][29][30] and a prediction 26 that the formation energy of Nb 5+ on Ti 4+ site ͑Nb Ti + ͒ decreases by decreasing the oxygen activity during the deposition ͑Ti-rich, O-poor deposition conditions͒.…”

Section: B Transport Properties Of Anatase Tio 2 : Nb Filmssupporting

confidence: 89%

Transparent semiconducting Nb-doped anatase TiO2 films deposited by helicon-wave-excited-plasma sputtering

Fouda¹,

Hazu²,

Haemori³

et al. 2011

Journal of Vacuum Science & Technology B, Nanotechnology an

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Electrical and optical properties of Nb-doped TiO 2 films deposited by dc magnetron sputtering using slightly reduced Nb-doped TiO 2 − x ceramic targets J. Vac. Sci. Technol. A 28, 851 (2010); 10.1116/1.3358153 rf magnetron sputter deposition of transparent conducting Nb-doped Ti O 2 films on Sr Ti O 3 Transparent and semitransparent conducting film deposition by reactive-environment, hollow cathode sputtering A transparent metal: Nb-doped anatase Ti O 2The authors report stoichiometry control and postdeposition annealing-free fabrication of Nb-doped transparent anatase TiO 2 ͑A-TiO 2 :Nb͒ films on alkaline-free glass substrates by helicon-wave-excited-plasma sputtering. The films tended to crystallize in the stable electrically semi-insulating rutile phase. However, although the appropriate deposition condition window was narrow, precise stoichiometry control using near-reducing ambient, namely, the deposition temperature higher than 450°C and O 2 partial pressure ͑P O 2 ͒ in the range between 5 ϫ 10 −4 and 1 ϫ 10 −2 Pa, enabled the deposition of a high refractive index semiconducting anatase phase. The electron concentration of the A-TiO 2 : Nb films increased with increasing Nb concentration up to Ti 0.907 Nb 0.093 O 2 . The results indicate that the Nb 5+ donor on the Ti 4+ site can be activated under near-reducing atmosphere where unwanted compensating defects may be passivated. As a result, anatase Ti 0.907 Nb 0.093 O 2 film deposited at 500°C and P O 2 =5ϫ 10 −4 Pa exhibited a resistivity of 3.4ϫ 10 −3 ⍀ cm and an optical transmittance higher than 90%. The refractive index of A-TiO 2 :Nb was found to be approximately 2.63 at 450 nm with spectroscopic ellipsometry, which is comparable to the InGaN alloys.

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Section: B Transport Properties Of Anatase Tio 2 : Nb Filmssupporting

confidence: 89%

Transparent semiconducting Nb-doped anatase TiO2 films deposited by helicon-wave-excited-plasma sputtering

Fouda¹,

Hazu²,

Haemori³

et al. 2011

Journal of Vacuum Science & Technology B, Nanotechnology an

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“…We successfully obtained conductive TNO films ( ρ ∼ 1.6 × 10 −3 Ω cm) on transparent polyimide films at an annealing temperature of 250°C. Table 1 summarizes the growth conditions and obtained ρ values 49, 50. Very recently, we succeeded in preparing conductive films by annealing amorphous films in air at 300–400°C (S. Nakao et al, unpublished data.…”

Section: Polycrystalline Films On Glass Substratesmentioning

confidence: 99%

Properties of TiO₂‐based transparent conducting oxides

Hitosugi

Yamada

Nakao

et al. 2010

Physica Status Solidi (a)

188

105

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The development and properties of titanium dioxide (TiO 2 )based transparent conducting oxides (TCO), which exhibit properties comparable to those of In 2-x Sn x O 3 (ITO), are reviewed in this article. An epitaxial thin film of anatase Ti 0.94 Nb 0.06 O 2 exhibited a resistivity (r) of 2.3 Â 10 À4 V cm and internal transmittance of $95% in the visible light region. Furthermore, we prepared polycrystalline films with r of 6.4 Â 10 À4 V cm at room temperature on glass substrates by using sputtering. We focus on characteristics unique to TiO 2based TCO, such as a high refractive index, high transmittance in infrared, and high stability in reducing atmospheres. Possible applications of TiO 2 -based TCOs, as well as the mechanism of the transparent conducting properties found in this d-electronbased TCO, are discussed in this review.Photograph showing TiO 2 -based TCO on a transparent plastic film. Note that the film appears greenish due to interference in the film originating from its high refractive index. This high refractive index is one of the unique characteristics of TiO 2based TCO.

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“…As a result, TiO 2 :Nb can be expected to create more carriers compared with TiO 2 :F. The experimental ionization efficiency of Nb in TiO 2 :Nb is >90% and the carriers density is around 10 21 cm −3 [34,35]. Although there is no available experimental ionization efficiency of F in TiO 2 :F, the value is expected to be much lower, and poor carrier density in TiO 2 :F will not be hard to predict.…”

Section: Electronic Propertiesmentioning

confidence: 99%

First-principles study on the electronic and optical properties of F- and Nb-doped anatase TiO2

Rui-Shuo

Liu

Gao

et al. 2011

Journal of Alloys and Compounds

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Fabrication of TiO2-based transparent conducting oxide on glass and polyimide substrates

Cited by 39 publications

References 15 publications

Transparent semiconducting Nb-doped anatase TiO2 films deposited by helicon-wave-excited-plasma sputtering

Transparent semiconducting Nb-doped anatase TiO2 films deposited by helicon-wave-excited-plasma sputtering

Properties of TiO₂‐based transparent conducting oxides

First-principles study on the electronic and optical properties of F- and Nb-doped anatase TiO2

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Fabrication of TiO2-based transparent conducting oxide on glass and polyimide substrates

Cited by 39 publications

References 15 publications

Transparent semiconducting Nb-doped anatase TiO2 films deposited by helicon-wave-excited-plasma sputtering

Transparent semiconducting Nb-doped anatase TiO2 films deposited by helicon-wave-excited-plasma sputtering

Properties of TiO2‐based transparent conducting oxides

First-principles study on the electronic and optical properties of F- and Nb-doped anatase TiO2

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Product

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Properties of TiO₂‐based transparent conducting oxides