Fabrication of TiO2/Cu2O heterojunction solar cells by electrophoretic deposition and electrodeposition

A hybrid photoelectrode with plasmonic Au@TiO2 nanoparticles for enhanced photoelectrochemical water splitting

“…Fig. 8,16,17,29,30 but demonstrates similar function of Z-scheme system with improved PEC performance for solar fuel generation. This sandwich-like photoelectrode is mimicking a Z-scheme type structure PEC cells with effective charge carrier processes.…”

“…A vast amount of studies have been concentrating on the performance improvement of TiO 2 -based photoelectrodes by modifying its crystalline structure, shape and size, doping with metals/non-metals, or coupling with other semiconductors and metals. 13,[16][17][18] Recently, Grätzel and co-workers reported one type of Cu 2 O based photoelectrodes which were decorated by Aldoped ZnO and TiO 2 multi-protecting barrier layers, which delivered a cathodic photocurrent density up to -7.6 mA·cm -2 . Among the coupled semiconducting materials in TiO 2 based PEC systems, cuprous oxide (Cu 2 O) is a promising candidate owing to the features of the small band gap energy of ~ 2.1 eV, a high theoretical photocurrent density of -14.7 mA·cm -2 , non-toxicity, and low-cost.…”

“…To protect Cu 2 O, Cu 2 O@TiO 2 core-shells and Cu 2 O/TiO 2 bilayered heterojunction structures have been designed. 13,[16][17][18] Recently, Grätzel and co-workers reported one type of Cu 2 O based photoelectrodes which were decorated by Al-doped ZnO and TiO 2 multi-protecting barrier layers, which delivered a cathodic photocurrent density up to À7.6 mA cm À2 . 13 However, the atomic layered deposition (ALD) technique employed to form the Al-ZnO/TiO 2 protecting barrier layer in their work have the concerns of high fabrication cost and the difficulty of scale-up.…”

Molecular Precursor Method for Fabricating p-Type Cu2O and Metallic Cu Thin Films

“…Transparent metal oxide thin ilms of p-type semiconductors deposited directly on various substrates ofer several advantages in the design of heterojunctions with n-type oxide ilms for fabricating thin ilm devices [2,3]. Over the past years, the quest to obtain high-quality cuprous oxide ilms has fueled the development of many physical processing techniques including sputering, thermal oxidation, vacuum evaporation, molecular beam epitaxy, and electrodeposition [4][5][6][7][8][9].…”

Physical properties of Cu2O thin films prepared by Silar method

“…Bakır oksit filmleri düşük maliyeti, zehirsiz olması, doğaya zarar vermemesi, bakırın doğada bol bulunması ve ekonomik olarak kolayca elde edilebilmesinden dolayı birçok kullanım alanı bulunmaktadır. Bakır oksit soğurucu bir tabaka olmasından dolayı güneş pillerinde umut verici malzemelerden biri olarak kabul edilir [2]. Bununla beraber anot malzemesi olarak lityum pillerde [3], fotokimyasal uygulamalarda [4], gaz sensörlerinde [5], biyosensörlerde [6], manyetik depolama aygıtlarında [7], optoelektronik aygıtlarda [8] tercih edilen malzemedir.…”