2012
DOI: 10.1016/j.tsf.2012.03.003
|View full text |Cite
|
Sign up to set email alerts
|

Fabrication of TiO2 thin film memristor device using electrohydrodynamic inkjet printing

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
4
1

Citation Types

0
50
0

Year Published

2013
2013
2020
2020

Publication Types

Select...
7
3

Relationship

0
10

Authors

Journals

citations
Cited by 103 publications
(50 citation statements)
references
References 35 publications
0
50
0
Order By: Relevance
“…This study focusses on improvement in the graphene nanocomposite with PVP, as flexible Electro-hydrodynamic atomization (EHDA) has been a preferred low-cost, non-contact, and efficient material printing technique [24][25][26][27][28][29][30], that can be used in a variety of ways for layer by layer deposition of materials. The details of EHDA phenomenon has been discussed by Poon [31] and it has been used for fabrication of thin film device applications [24][25][26][27][28][29][30], OLED [32], thin film memristor [33,34] and Schottky diodes [35].…”
Section: Introductionmentioning
confidence: 99%
“…This study focusses on improvement in the graphene nanocomposite with PVP, as flexible Electro-hydrodynamic atomization (EHDA) has been a preferred low-cost, non-contact, and efficient material printing technique [24][25][26][27][28][29][30], that can be used in a variety of ways for layer by layer deposition of materials. The details of EHDA phenomenon has been discussed by Poon [31] and it has been used for fabrication of thin film device applications [24][25][26][27][28][29][30], OLED [32], thin film memristor [33,34] and Schottky diodes [35].…”
Section: Introductionmentioning
confidence: 99%
“…Memristors can also be printed with copper and titanium dioxide as the bottom electrode and active layer, respectively. [ 187 ] …”
Section: Memristorsmentioning
confidence: 99%
“…Inspired by the success of multi-bit flash memory, that proved to be highly efficient in high memory density, there have been several recent attempts to fabricate such multi-bit cells with memristors [18][19][20][21][22][23][24]. The main questions remaining for understanding the potential of memristors are their physical limitations and reliability in storing information, and how many bits per cell can be stored?…”
Section: Introductionmentioning
confidence: 99%