Fabrication of ultra-dense sub-10 nm in-plane Si nanowire arrays by using a novel block copolymer method: optical properties

Ghoshal, Tandra; Ntaras, Christos; O’Connell, John; Shaw, Matthew T.; Holmes, Justin D.; Avgeropoulos, Apostolos; Morris, Michael A.

doi:10.1039/c5nr07085f

Cited by 16 publications

(20 citation statements)

References 60 publications

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“…Black et al fabricated densely packed silicon nanotextures with feature sizes smaller than 50 nm by block copolymer self-assembly to enhance the broadband antireflection of solar cells [ 5 ]. Morris et al fabricated Si nanowire array by self-assembly of block copolymer with LiCl, which showed the possible application in the area of photonics and photoluminescence [ 6 ].…”

Section: Introductionmentioning

confidence: 99%

“…In previous experiments [ 6 , 17 , 27 ], the co-solvents for salts are frequently used because of the solubility of salts and the efficiency of coordination between salts and BCPs. Russell et al continuously stirred after the mixture of LiCl in tetrahydrofuran (THF) and polystyrene- block -poly(methyl methacrylate) (PS- b -PMMA) toluene solution with moderate heating until most of THF was evaporated and the solutions became clear.…”

Section: Introductionmentioning

confidence: 99%

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Fabrication of Ordered Nanopattern by using ABC Triblock Copolymer with Salt in Toluene

Huang

Zhong

et al. 2017

Nanoscale Res Lett

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Ordered nanopatterns of triblock copolymer polystyrene-block-poly(2-vinylpyridine)-block- poly (ethylene oxide)(PS-b-P2VP-b-PEO) have been achieved by the addition of lithium chloride (LiCl). The morphological and structural evolution of PS-b-P2VP-b-PEO/LiCl thin films were systematically investigated by varying different experimental parameters, including the treatment for polymer solution after the addition of LiCl, the time scale of ultrasonic treatment and the molar ratio of Li+ ions to the total number of oxygen atoms (O) in PEO block and the nitrogen atoms (N) in P2VP block. When toluene was used as the solvent for LiCl, ordered nanopattern with cylinders or nanostripes could be obtained after spin-coating. The mechanism of nanopattern transformation was related to the loading of LiCl in different microdomains.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Fabrication of Ordered Nanopattern by using ABC Triblock Copolymer with Salt in Toluene

Huang

Zhong

et al. 2017

Nanoscale Res Lett

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“…insertion by using PS-PEO BCP where chemical co-ordination between metal ion and PEO microdomains produces inorganic patterns that can act as ‘hard’ masks to allow facile and efficient, high aspect ratio pattern transfer into Si substrate 27 – 34 . In comparison, iron oxide is acting as an excellent hard mask over silicon 27 , 29 , 31 , 32 , 34 . However, in common with much of the other BCP work (such as PS-P4VP and PS-P2VP etc.…”

Section: Introductionmentioning

confidence: 99%

Development of Ordered, Porous (Sub-25 nm Dimensions) Surface Membrane Structures Using a Block Copolymer Approach

Ghoshal

Holmes

Morris

2018

Sci Rep

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In an effort to develop block copolymer lithography to create high aspect vertical pore arrangements in a substrate surface we have used a microphase separated poly(ethylene oxide) -b- polystyrene (PEO-b-PS) block copolymer (BCP) thin film where (and most unusually) PS not PEO is the cylinder forming phase and PEO is the majority block. Compared to previous work, we can amplify etch contrast by inclusion of hard mask material into the matrix block allowing the cylinder polymer to be removed and the exposed substrate subject to deep etching thereby generating uniform, arranged, sub-25 nm cylindrical nanopore arrays. Briefly, selective metal ion inclusion into the PEO matrix and subsequent processing (etch/modification) was applied for creating iron oxide nanohole arrays. The oxide nanoholes (22 nm diameter) were cylindrical, uniform diameter and mimics the original BCP nanopatterns. The oxide nanohole network is demonstrated as a resistant mask to fabricate ultra dense, well ordered, good sidewall profile silicon nanopore arrays on substrate surface through the pattern transfer approach. The Si nanopores have uniform diameter and smooth sidewalls throughout their depth. The depth of the porous structure can be controlled via the etch process.

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“…In contrast to our previous studies, the methodology has been extended to fabrication of friendly materials here and particularly metals. [14][15][16][17] Attempts were made to adapt this strategy to produce silicon nanowire arrays by use of different hard masks and to determine the best suitable mask to fabricate good quality Si patterns. The nanoporous polymer templates from S2 and S3 were utilized to form ordered nickel oxide (NiO) and nickel (Ni) nanodot arrays.…”

Section: Preparation Of Hard Masks Nanopatterns By Block Copolymersmentioning

confidence: 99%

“…[11][12] Various methods have been used to enhance etch contrast and we have been central in developing simple solution mediated metal ion insertion to produce inorganic patterns from the BCP arrangement that can act as 'hard' masks to allow facile and efficient, high aspect ratio pattern transfer. [13][14][15][16][17] However, most of our work has been around iron systems and this material is not compatible with high volume silicon device manufacture.…”

Section: Introductionmentioning

confidence: 99%

Development of a facile block copolymer method for creating hard mask patterns integrated into semiconductor manufacturing

et al. 2016

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Original citationGhoshal, T., Shaw, M. T., Holmes, J. D. and Morris, M. A. (2016) 'Development of a facile block copolymer method for creating hard mask patterns integrated into semiconductor manufacturing', NanoResearch, 9(10), pp. ABSTRACT:The aim here is the development of a facile process to create patterns of inorganic oxides and metals on a substrate that can act as hard masks within a lithographic process. These materials should have high etch contrast (to silicon) and so allow high aspect, high fidelity pattern transfer whilst being readily integrate-able in modern semiconductor fabrication (FAB friendly). Here, we show that ultra-small dimension hard masks can be used to develop large areas of densely packed vertically and horizontally orientated Si nanowire arrays. The inorganic and metal hard masks (Ni, NiO and ZnO) of different morphologies and dimensions were formed using microphase separated polystyrene-b-poly(ethylene oxide) (PSb-PEO) block copolymer (BCP) thin films though the variation of BCP molecular weight and the annealing conditions such as temperature, solvent/s etc.. The self-assembled polymer patterns were solvent processed and metal ions included into chosen domains via a selective inclusion method and subsequent inorganic oxide nanopatterns were developed using standard techniques. It is shown by high resolution transmission electron microscopy studies that high aspect pattern transfer could be affected by standard plasma etch techniques. The masking ability of the different materials was compared in order to create the highest quality uniform and smooth sidewall profile of the Si nanowire arrays. Notably, good performance of metal mask was seen and this could impact the use of these materials at small dimension where conventional methods are severely limited.

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Fabrication of ultra-dense sub-10 nm in-plane Si nanowire arrays by using a novel block copolymer method: optical properties

Cited by 16 publications

References 60 publications

Fabrication of Ordered Nanopattern by using ABC Triblock Copolymer with Salt in Toluene

Fabrication of Ordered Nanopattern by using ABC Triblock Copolymer with Salt in Toluene

Development of Ordered, Porous (Sub-25 nm Dimensions) Surface Membrane Structures Using a Block Copolymer Approach

Development of a facile block copolymer method for creating hard mask patterns integrated into semiconductor manufacturing

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