Fabrication of ultra-fine vias in low CTE Build-up Films using a novel dry etching technology

Morikawa, Yasuhiro; Sato, Muneyuki; Sakao, Yosuke; Fujinaga, Toru; Tani, N.; Saito, Kazuya

doi:10.1109/ectc.2015.7159795

Cited by 15 publications

(1 citation statement)

References 3 publications

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“…12). [98][99][100][101][102] For high-density package substrate manufacturing, the fine via bottom residue, including resin and silica filler, can be removed using 60 Hz nonequilibrium atmospheric-pressure plasma with perfluoromethyl vinylether. 103) 6.…”

Section: Fine Via Patterning In a Built-up Filmmentioning

confidence: 99%

Rethinking surface reactions in nanoscale dry processes toward atomic precision and beyond: a physics and chemistry perspective

Ishikawa

Ishijima

Shirafuji

et al. 2019

Jpn. J. Appl. Phys.

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In this review, we discuss the progress of emerging dry processes with atomic precision. Researchers in the field of plasma processing and surface science have addressed the increasingly challenging demands of material selectivity by utilization of synergistic enhancement of etching or deposition. The discussion encompasses major challenges in the plasma science and technology community. The focus of the review is advances in atomic layer etching and area-selective deposition with activation or deactivation, especially in terms of materials scaling and variety. Control of high-aspect-ratio feature fabrication in semiconductor manufacturing and etched shapes of interior features at the nanoscale are needed. Issues related to profile distortion have received much attention. State-of-the-art techniques used in semiconductor manufacturing are reviewed and future challenges are outlined.

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