Fabrication of ultra-low antireflection SiNWs arrays from mc-Si using one step MACE

Zhang, Cong; Li, Shaoyuan; Ma, Wenhui; Ding, Zhao; Wan, Xiaohan; Yang, Jia; Chen, Zhengjie; Zou, Yuxin; Qiu, Jiajia

doi:10.1007/s10854-017-6573-7

Cited by 17 publications

(11 citation statements)

References 22 publications

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“…Moreover, the silver nanoclusters deposited on the surface of the Si wafer were found to have various sizes and shapes, because the random paths to contact the selected seed allow the particles to diffuse and stick to the formed structure. This led to the formation of SiNW arrays with non-uniform size and shape [ 5 , 12 , 15 – 20 , 28 , 36 – 38 ].…”

Section: Resultsmentioning

confidence: 99%

“…From the observations, SiNWs on the Si substrate are black in appearance compared to the bare Si wafer, which has a shiny surface. The antireflective nature of the SiNWs has drawn attention since one of the major energy loss mechanisms of solar cells is optical reflection; the utilization of these nanostructures in photosensitive devices may eliminate the need for antireflective coatings [ 5 , 19 , 20 , 28 ]. To quantify the optical properties of the fabricated SiNWs, an ultraviolet-visible (UV-Vis) spectrophotometer was used to measure the reflectance of the samples.…”

Section: Resultsmentioning

confidence: 99%

“…The first introduction of metal-assisted chemical etching of Si was reported in 1997, where porous Si was fabricated by etching an aluminum (Al)-coated Si substrate in a solution composed of hydrofluoric acid (HF), HNO 3 , and H 2 O [ 13 ]. Since then, many researchers have employed similar methods to fabricate SiNW arrays using various etching solution systems, such as HF/AgNO 3 or HF/H 2 O 2 /AgNO 3 [ 5 , 12 , 14 – 20 ].…”

Section: Introductionmentioning

confidence: 99%

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Optical and Electrical Characteristics of Silicon Nanowires Prepared by Electroless Etching

Hutagalung¹,

Fadhali²,

Areshi³

et al. 2017

Nanoscale Res Lett

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Silicon nanowires (SiNWs) were fabricated by the electroless etching of an n-type Si (100) wafer in HF/AgNO3. Vertically aligned and high-density SiNWs are formed on the Si substrates. Various shapes of SiNWs are observed, including round, rectangular, and triangular. The recorded maximum reflectance of the SiNWs is approximately 19.2%, which is much lower than that of the Si substrate (65.1%). The minimum reflectance of the SiNWs is approximately 3.5% in the near UV region and 9.8% in the visible to near IR regions. The calculated band gap energy of the SiNWs is found to be slightly higher than that of the Si substrate. The I–V characteristics of a freestanding SiNW show a linear ohmic behavior for a forward bias up to 2.0 V. The average resistivity of a SiNW is approximately 33.94 Ω cm.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Optical and Electrical Characteristics of Silicon Nanowires Prepared by Electroless Etching

Hutagalung¹,

Fadhali²,

Areshi³

et al. 2017

Nanoscale Res Lett

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show abstract

“…Among these methods, MACE is the most promising, facile and low-cost in nature. MACE can reduce broadband reflection of the c-Si to lower than 10%, without the need of additional ARC [5]. MACE can be carried out by two approaches; one-step and twostep processes [6].…”

Section: Introductionmentioning

confidence: 99%

Effects of silver nanoparticles layer thickness towards properties of black silicon fabricated by metal-assisted chemical etching for photovoltaics

2020

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This paper investigates effects of silver nanoparticles (Ag NPs) layer thickness towards properties of black silicon (b-Si) fabricated by two-step metal-assisted chemical etching for potential application in photovoltaic (PV) devices. Ag NPs with different layer thicknesses (1.3-5.1 µm) are deposited on monocrystalline silicon (mono c-Si) wafers by electroless chemical deposition in AgNO 3 /HF aqueous solution for 10-40 s. This is followed by etching in HF:H 2 O 2 :DI H 2 O aqueous solution for 20 s. Surface morphological investigation confirms presence of b-Si nanowires with height of 250-577 nm and diameter of 100-200 nm. The b-Si nanowires suppress broadband reflectance from the wafers over 300-1100 nm wavelength region, due to refractive index grading effect. Sample with Ag NPs layer thickness of 5.1 µm exhibits b-Si nanowires with average height of 577 nm and average diameter of 200 nm after etching. This sample demonstrates the lowest weighted average reflectance of 5.5% compared to other samples. This sample exhibits absorption of 96.5% at wavelength of 600 nm. The enhanced broadband light absorption leads to maximum potential short-circuit current density (J sc(max)) of 39.7 mA/cm 2 , or 51% relative enhancement compared to planar reference sample.

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“…The large surface-to-volume ratio and the one-dimensional structure of silicon nanowires (SiNWs) dramatically modify the electrical and optical properties of the bulk silicon, [7][8][9][10][11] which makes them suitable candidates for numerous applications such as diagnosis of diseases, 12 sensing, [13][14][15] catalysis, 16 manufacture of batteries, 17 and micro-super capacitors and solar cells. 18,19 Over the past two decades, many strategies have been developed to combine a hierarchical nano-array effect of silicon nanowires decorated with a metallic surface of silver nanoparticles (AgNPs) in order to design high-performance SERS substrates.…”

Section: Introductionmentioning

confidence: 99%

Application of Doehlert Matrix for an Optimized Preparation of a Surface-Enhanced Raman Spectroscopy (SERS) Substrate Based on Silicon Nanowires for Ultrasensitive Detection of Rhodamine 6G

et al. 2019

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In this work, we combined a hierarchical nano-array effect of silicon nanowires (SiNWs) with a metallic surface of silver nanoparticles (AgNPs) to design a surface-enhanced Raman spectroscopy (SERS) scattering substrate for sensitive detection of Rhodamine 6G (R6G) which is a typical dye for fluorescence probes. The SiNWs were prepared by Metal-Assisted Chemical Etching (MACE) of n-Si (100) wafers. The Doehlert design methodology was used for planning the experiment and analyzing the experimental results. Thanks to this methodology, the R6G SERS response has been optimized by studying the effects of the silver nitrate concentration, silver nitrate and R6G immersion times and their interactions. The immersion time in R6G solution stands out as the most of influential factor on the SERS response.

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Fabrication of ultra-low antireflection SiNWs arrays from mc-Si using one step MACE

Cited by 17 publications

References 22 publications

Optical and Electrical Characteristics of Silicon Nanowires Prepared by Electroless Etching

Optical and Electrical Characteristics of Silicon Nanowires Prepared by Electroless Etching

Effects of silver nanoparticles layer thickness towards properties of black silicon fabricated by metal-assisted chemical etching for photovoltaics

Application of Doehlert Matrix for an Optimized Preparation of a Surface-Enhanced Raman Spectroscopy (SERS) Substrate Based on Silicon Nanowires for Ultrasensitive Detection of Rhodamine 6G

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