Fabrication of UV detectors based on ZnO nanowires using silicon microchannel

Kar, Jyoti Prakash; Das, Sachindranath; Choi, Jung Chan; Lee, Y.A.; Lee, T.Y.; Myoung, Jae‐Min

doi:10.1016/j.jcrysgro.2009.04.005

Cited by 56 publications

(27 citation statements)

References 25 publications

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“…1,2 Therefore, development of a portable UV detector based on p-n junctions of wide bandgap semiconductors has been in great demand. Recently, several UV detectors have been developed using Schottky junction and p-n junction diodes of wide bandgap semiconductor materials such as ZnSe, 3 ZnS, 4 GaN, 5 and ZnO systems.…”

Section: Introductionmentioning

confidence: 99%

“…9 Nanostructured ZnO is a promising candidate for widespread applications as emitters and detectors of UV light. 1,2,6,7 ZnO has a wide bandgap of 3.37eV and, in addition, nanostructured ZnO has a large surface-to-volume ratio as compared to bulk ZnO. These properties result in efficient light absorption in the UV region and enhance the photoresponse of nanostructured ZnO devices.…”

Section: Introductionmentioning

confidence: 99%

“…Some studies on electrical and optoelectronic properties of ZnO nanostructure based heterojunctions have been reported in the recent past. 1,2,[17][18][19] Al-Henini et al 18 studied the electrical properties of the p-Si/n-ZnO nanowire heterojunction. Guo et al 2 have fabricated ZnO nanowire/n-Si heterojunction by using magnetron cosputtering technique and have demonstrated a strong responsivity of the diode for both visible and UV light.…”

Section: Introductionmentioning

confidence: 99%

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Large-area and nanoscale n-ZnO/p-Si heterojunction photodetectors

Periasamy

Chakrabarti

2011

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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The article reports the results of our experimental investigation on the effect of UV light on the characteristics of n-ZnO/p-Si heterojunction. c-Axis oriented zinc oxide (ZnO) films were deposited by thermal evaporation technique on p-type silicon (Si) substrates to form ZnO/Si heterojunctions. Both large-area and nanoscale heterojunction configurations were studied. The measured current–voltage characteristics in dark and illuminated conditions confirm the rectifying behavior of the heterojunctions and an excellent UV response. The responsivity values were measured to be of 0.18 and 0.12 A/W to UV light (365nm) for large-area and nanoscale heterojunctions, respectively. The values are comparable with those offered by other commercial UV detectors. The nanoscale heterojunction device can find applications in nanophotonics.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Large-area and nanoscale n-ZnO/p-Si heterojunction photodetectors

Periasamy

Chakrabarti

2011

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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“…This phenomenon could also be related to the higher surface to volume ratio of Al-doped ZnO nanorod arrays compared to the undoped nanorod, which is contributed by the smaller size of the Al-doped ZnO nanorod. 44) It is generally accepted that the photocurrent is attributed to the oxygen desorption process from the nanorods surface during the UV illumination, which leaves the free electrons to move in the conduction band. The reactions occur on the nanorods surface during UV illumination are shown by the following equations: 45) …”

Section: Resultsmentioning

confidence: 99%

Effects of Aluminium Doping and Electrode Distance on the Performance of Aligned Zinc Oxide Nanorod Array-Based Ultraviolet Photoconductive Sensors

Mamat

Khusaimi

Musa

et al. 2012

Jpn. J. Appl. Phys.

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Metal-semiconductor-metal (MSM) ultraviolet (UV) photoconductive sensors were fabricated using undoped and aluminium (Al)-doped zinc oxide (ZnO) nanorod arrays prepared via the sonicated sol-gel immersion method. Notably, the nanorod diameter decreased with Al-doping, varying in the size range of 30 to 70 nm, compared with undoped ZnO, which had a size range of 80-120 nm. The Al-doped nanorod arrays exhibited optical properties superior to those of the undoped ZnO, with an average transmittance of 85% in the visible region; the Al-doped arrays also showed good UV absorption properties. Photoluminescence measurements indicate that the suppression of defects was observed for the Al-doped ZnO nanorod, as shown by a bigger I UV =I vis of 1.24 compared to that of undoped ZnO (0.97). According to the experimental results, the UV responsivity was significantly improved by the Al-doping, with the highest value of 373 A/W obtained at an inter-electrode distance of 0.07 mm under UV light (365 nm, 750 W/cm 2 ) with a 10 V bias. In addition, the responsivity of the UV sensor also significantly improved when the inter-electrode distances were reduced from 2.00 to 0.07 mm. #

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“…Vertically aligned Zinc oxide (ZnO) nanostructures become very important and useful materials in nanodevices fabrications due to its outstanding characteristics such as high aspect ratio, high electron mobility and large surface area availability [1,2]. ZnO is categorized into II-VI group compound semiconductor with band gap energy of 3.2~3.3 eV and exciton binding energy of 60 meV [3,4].…”

Section: Introductionmentioning

confidence: 99%

Ultra-violet Sensing Characteristic and Field Emission Properties of Vertically Aligned Aluminum Doped Zinc Oxide Nanorod Arrays

Mamat

Khusaimi

Malik

et al. 2011

AIP Conference Proceedings

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Role of oxygen desorption during vacuum annealing in the improvement of electrical properties of aluminum doped zinc oxide films synthesized by sol gel method Lowering of stimulated emission threshold of zinc oxide by doping with thermally diffused aluminum supplied from sapphire substrate Effect of ultraviolet radiation exposure on room-temperature hydrogen sensitivity of nanocrystalline doped tin oxide sensor incorporated into microelectromechanical systems device J. Appl. Phys. 97, 054307 (2005); 10.1063/1.1851597Preparation and properties of transparent conductive aluminum-doped zinc oxide thin films by sol-gel process Abstract. Ultra-violet (UV) sensing behavior and field emission characteristic have been investigated on vertically aligned aluminum (Al) doped zinc oxide (ZnO) nanorod arrays prepared using sol-gel immersion method. Uniform and high coverage density of ZnO nanorod arrays have been succesfully deposited on seeded-catalyst coated substrates. The synthesized nanorods have diameter sizes between 50 nm to 150 nm. The XRD spectra show Al doped ZnO nanorod array has high crystallinity properties with the dominancy of crystal growth along (002) plane or c-axis. UV photoresponse measurement indicates that Al doped ZnO nanorod array sensitively detects UV light as shown by conductance increment after UV illumination exposure. The nanorod array shows good field emission properties with low turn on field and threshold field at 2.1 V/μm and 5.6 V/μm, respectively. The result suggested that Al doped ZnO nanorod arrays prepared by low-cost sol-gel immersion method show promising result towards fabrication of multi applications especially in UV photoconductive sensor and field emission displays

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Fabrication of UV detectors based on ZnO nanowires using silicon microchannel

Cited by 56 publications

References 25 publications

Large-area and nanoscale n-ZnO/p-Si heterojunction photodetectors

Large-area and nanoscale n-ZnO/p-Si heterojunction photodetectors

Effects of Aluminium Doping and Electrode Distance on the Performance of Aligned Zinc Oxide Nanorod Array-Based Ultraviolet Photoconductive Sensors

Ultra-violet Sensing Characteristic and Field Emission Properties of Vertically Aligned Aluminum Doped Zinc Oxide Nanorod Arrays

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