Fabrication of Zinc Oxide Resistive Random-Access Memory on a Flexible Polyimide Substrate with Different Thicknesses

Abstract

In this study, a resistive random-access memory (RRAM) with a metal-insulator-metal structure was fabricated on polyimide substrates with different thicknesses, and the insulating layer was deposited with zinc oxide material by the sol-gel method. The electrical properties of the RRAM devices were evaluated using bending tests. In the bending tests, the operating electric field increased and the retention time decreased; nevertheless, the electrical properties of the device with a thicker polyimide substrate were less affected. The results of this study will help improve the characteristics of RRAMs on soft boards.