Fabrication of ZnO-encapsulated porous alumina structure utilizing a two-step anodizing technique for memristor applications

Abstract

Highly ordered porous alumina thin films with various aspect ratio were fabricated by two-steps anodizing technique. The dependence of high resistance state to low resistance state ratio on the aspect ratio of the pores was observed in the memristors utilizing porous alumina. The reducing of threshold voltage and improvement of stability were achieved by properly encapsulating i-ZnO inside the porous alumina as the switching medium. Significant improvement in the ratio of high resistance state to low resistance state was achieved by i-ZnO encapsulation in porous alumina compared to the conventional planer switching layer of ZnO alone.