Fabrication of ZnO nanorod array-based photodetector with high sensitivity to ultraviolet

Li, Yingying; Dong, Xiang; Cheng, Chuanwei; Zhou, Xuechao; Zhang, Peigen; Gao, Junshan; Zhang, Haiqian

doi:10.1016/j.physb.2009.08.011

Cited by 36 publications

(16 citation statements)

References 27 publications

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“…The desirable crystallinity properties and low defect concentrations of the annealed nanorods may have contributed to the high responsivity of this sensor. The rise and decay time constants for the fabricated sensors were estimated using equations (12-13) (Jun et al, 2009, Li et al, 2009 Decay process after UV illumination OFF:…”

Section: Wavelength (Nm)mentioning

confidence: 99%

ZnO Nanorod Arrays Synthesised Using Ultrasonic-Assisted Sol-Gel and Immersion Methods for Ultraviolet Photoconductive Sensor Applications

Mamat¹,

Khusaimi²,

Musa³

et al. 2012

Nanorods

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Section: Wavelength (Nm)mentioning

confidence: 99%

ZnO Nanorod Arrays Synthesised Using Ultrasonic-Assisted Sol-Gel and Immersion Methods for Ultraviolet Photoconductive Sensor Applications

Mamat¹,

Khusaimi²,

Musa³

et al. 2012

Nanorods

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“…27,28 In recent times, many groups have reported the UV detection properties of ZnO thin¯lms and ZnO nanostructures-based devices. [28][29][30] Li et al reported the Au/ZnO-NR array-based UV photodetectors (UV-PDs) with good sensitivity (contrast ratio $4.7). 30 They have grown ZnO-NR arrays on F-doped SnO 2 (FTO) substrates by hydrothermal synthesis.…”

Section: Introductionmentioning

confidence: 99%

“…[28][29][30] Li et al reported the Au/ZnO-NR array-based UV photodetectors (UV-PDs) with good sensitivity (contrast ratio $4.7). 30 They have grown ZnO-NR arrays on F-doped SnO 2 (FTO) substrates by hydrothermal synthesis. Humayun et al reported a ZnO nanostructure-decorated microgap electrode UV sensor.…”

Section: Introductionmentioning

confidence: 99%

Characterization of Ag/ZnO Nanorod Schottky Diode-Based Low-Voltage Ultraviolet Photodetector

Singh

Jit

Park

2017

NANO

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Ultraviolet (UV) detection characteristics of Ag Schottky contacts with ZnO nanorods (ZnONRs) grown on Indium Tin Oxide (ITO)-coated glass substrates have been investigated. A lowtemperature hydrothermal method was used for growing ZnO-NRs. Circular contacts of Ag were deposited above the ZnO-NRs/ITO samples using the shadow mask technique. The structural properties of the ZnO-NRs were characterized by using scanning electron microscopy (SEM), atomic force microscope (AFM) and X-ray di®raction (XRD). The results revealed a (0002) crystal orientation and a wurtzite hexagonal structure. The electrical characteristics of the Ag/ ZnO-NR Schottky contacts were studied at forward applied bias over the range 0 V to 1 V, under dark and UV illumination. The dark and photocurrents were 1:29 Â 10 À5 A and 2:16 Â 10 À5 A, respectively, and the contrast ratio (ratio of photocurrent to dark current) was 1.67 at þ1.0 V for these devices. The results show that these devices could be useful for cost-e®ective and low-voltage UV detection applications.

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“…Under ultraviolet (UV) illumination, the resistivity of single ZnO nanowire prepared on gold electrodes by vapor phase transport process has 4 to 6 orders decrease . The UV photocurrent of a vertically oriented ZnO nanotip array prepared through a hydrothermal synthesis route is large, but the dark current is large and the response is slow . The mechanism is that oxygen adsorbed on ZnO nanostructure will take a free electron (O 2 − ) to leave behind a depletion region near the surface and decrease the conductivity in the dark .…”

Section: Introductionmentioning

confidence: 99%

“…The UV photocurrent of a vertically oriented ZnO nanotip array prepared through a hydrothermal synthesis route is large, but the dark current is large and the response is slow . The mechanism is that oxygen adsorbed on ZnO nanostructure will take a free electron (O 2 − ) to leave behind a depletion region near the surface and decrease the conductivity in the dark . Under UV illumination, the generated electron‐hole pairs reduce O 2 − to decrease the depletion region width and increase the conductivity of ZnO nanostructure.…”

Section: Introductionmentioning

confidence: 99%

Characterization of annealed zinc oxide nanotip array prepared by chemical bath deposition

Lee

Jhang

2015

Crystal Research and Technology

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We investigate the characteristics of thermally annealed ZnO nanotip in various ambient. AZO seed layer was first prepared on glass substrate by RF sputtering. A vertically oriented ZnO nanotip array was grown on AZO seed layer/glass by chemical bath deposition with precursors of zinc nitrate and ammonia at 70 °C. By thermal annealing in N2O ambient at 300 °C for 1 hour, the characteristics of ZnO nanotip array were improved and the ultraviolet sensor shows the best rise time of 50 s, decay time of 70 s and on/off current ratio of 26.04.

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Fabrication of ZnO nanorod array-based photodetector with high sensitivity to ultraviolet

Cited by 36 publications

References 27 publications

ZnO Nanorod Arrays Synthesised Using Ultrasonic-Assisted Sol-Gel and Immersion Methods for Ultraviolet Photoconductive Sensor Applications

ZnO Nanorod Arrays Synthesised Using Ultrasonic-Assisted Sol-Gel and Immersion Methods for Ultraviolet Photoconductive Sensor Applications

Characterization of Ag/ZnO Nanorod Schottky Diode-Based Low-Voltage Ultraviolet Photodetector

Characterization of annealed zinc oxide nanotip array prepared by chemical bath deposition

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