2021
DOI: 10.1002/chem.202102828
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Fabrication of ZnSe/C Hollow Polyhedrons for Lithium Storage

Abstract: ZnSe has got extensive attention for high-performance LIBs anode due to its remarkable theoretical capacity and environmental friendliness. Nevertheless, the large volume variation for the ZnSe in the discharge/charge processes brings about rapid capacity fading and poor rate performance. Herein, ZnSe/C hollow polyhedrons are successfully synthesized by selenization of zeolitic imidazolate framework-8 (ZIF-8) with resorcinol-formaldehyde (RF) coating. The protection of C layer derived from RF coating layer and… Show more

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Cited by 6 publications
(11 citation statements)
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“…Note: ZnTe may undergo a partial recombination reaction; i.e., eqn (1) and (3) are not completely reversible but leave a minor amount of Te in an elemental state after A extraction; in some references, elemental Se also presents in the charge/discharge process for ZnSe). 16,22,24,29,31,37,40,41,[43][44][45][46][47]…”
Section: Electrochemical Storage Mechanismsmentioning
confidence: 99%
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“…Note: ZnTe may undergo a partial recombination reaction; i.e., eqn (1) and (3) are not completely reversible but leave a minor amount of Te in an elemental state after A extraction; in some references, elemental Se also presents in the charge/discharge process for ZnSe). 16,22,24,29,31,37,40,41,[43][44][45][46][47]…”
Section: Electrochemical Storage Mechanismsmentioning
confidence: 99%
“…44 Notably, for the TMCs including ZCs, they usually exhibited a pseudocapacitance-dominated behavior (rather than diffusion-controlled process), especially at high rates, which are beneficial for highperformance batteries. 17,31,46,[48][49][50] Zinc chalcogenides typically have a cubic (sphalerite, or zinc blende) crystal structure, but can be also prepared as halite crystals or in hexagonal crystals (wurtzite structure). Those with unusual layered structures (e.g., tetragonal, t-ZnX, X = S, Se) prefer the AA stacking pattern (theoretical d ZnS = 2.40 Å, and d ZnSe = 2.48 Å in double-layer sheets) when forming multilayer structures, although exhibiting an interesting variation of interlayer distance (i.e., shortening to 2.33 Å for t-ZnS bulk but elongating to 2.91 Å for t-ZnSe bulk).…”
Section: Electrochemical Storage Mechanismsmentioning
confidence: 99%
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