Fabrication of ZnSn Thin Films Obtained by RF co-sputtering

Abstract

The Zn, Sn, and ZnSn thin films were deposited on Si(100) substrate using radio frequency (RF) magnetron cosputtering method. A surface profiler and X-ray photoelectron spectroscopy (XPS) were used to investigate the Zn, Sn, and ZnSn thin films. Thickness of the thin films was measured by a surface profiler. The deposition rates of pure Zn and Sn thin films were calculated with thickness and sputtering time for optimization. From the survey XPS spectra, we could conclude that the thin films were successfully deposited on Si(100) substrate. The chemical environment of the Zn and Sn was monitored with high resolution XPS spectra in the binding energy regions of Zn 2p, Sn 3d, O 1s, and C 1s.

Tailoring the surface properties of molybdenum oxytelluride thin films by its compositional ratio

“…The exact details of the system were described elsewhere. 28 The base pressure of the co-sputtering chamber was maintained at 2.4Â10 À2 Pa. Mo and Te (99.99%, Vacuum Thin Film Materials, Incheon, Korea) targets were used to fabricate MOT TFs, and p-type Si wafers were used as substrates for the TFs. To fabricate TFs with uniform thickness, the Si substrates were rotated counterclockwise at 5 rpm using a sample rotator.…”

“…MOT TFs were fabricated using a homemade RF magnetron co‐sputtering system. The exact details of the system were described elsewhere 28 . The base pressure of the co‐sputtering chamber was maintained at 2.4×10 −2 Pa. Mo and Te (99.99%, Vacuum Thin Film Materials, Incheon, Korea) targets were used to fabricate MOT TFs, and p‐type Si wafers were used as substrates for the TFs.…”