2010
DOI: 10.1016/j.ceramint.2010.07.011
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Fabrication of β-Si3N4 whiskers from a GPSed-RBSN sponge using 6Y2O3–2MgO additives

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Cited by 6 publications
(3 citation statements)
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“…The microstructural development of Si 3 N 4 ceramics is controlled mainly by the Si 3 N 4 starting powders, the additives, and the sintering parameters. 28,[31][32][33][34][35] To obtain the Si 3 N 4 foam ceramics with nest-like cell structure, the sintering nitrogen pressure and holding time are adjusted at temperature 1750°C, the Si 3 N 4 foam ceramics with nest-like cell structure are achieved, and the SEM micrographs of Si 3 N 4 foam ceramics are shown in Figs. 5 and 6.…”
Section: Resultsmentioning
confidence: 99%
See 1 more Smart Citation
“…The microstructural development of Si 3 N 4 ceramics is controlled mainly by the Si 3 N 4 starting powders, the additives, and the sintering parameters. 28,[31][32][33][34][35] To obtain the Si 3 N 4 foam ceramics with nest-like cell structure, the sintering nitrogen pressure and holding time are adjusted at temperature 1750°C, the Si 3 N 4 foam ceramics with nest-like cell structure are achieved, and the SEM micrographs of Si 3 N 4 foam ceramics are shown in Figs. 5 and 6.…”
Section: Resultsmentioning
confidence: 99%
“…The results indicate that flexural strength monotonically decreases with the increase of porosity, the flexural strength is in the range of 3.8 to 77.2 MPa when porosity varies from 82.1% to 60.6%. Tuyen 33 prepared Si 3 N 4 foam ceramics by pressure sintered (GPSed)-reaction bonded silicon nitride process, pore size was about 300 lm, and the flexural strength was not reported. Normally, the large pores (e.g., 300 lm) in foam ceramics significantly reduce the mechanical strength.…”
Section: Resultsmentioning
confidence: 99%
“…For example, Do-Van et al [7] fabricated Si 3 N 4 whiskers using a gas pressure sintered-reaction bond silicon nitride process at 1 550 for 9 h. The formation of b-Si 3 N 4 whiskers based on the VLS mechanism by microwave sintering has not been reported. For example, Do-Van et al [7] fabricated Si 3 N 4 whiskers using a gas pressure sintered-reaction bond silicon nitride process at 1 550 for 9 h. The formation of b-Si 3 N 4 whiskers based on the VLS mechanism by microwave sintering has not been reported.…”
Section: Introductionmentioning
confidence: 99%