Fabrication of ᵞ-In₂Se₃-Based Photodetector Using RF Magnetron Sputtering and Investigations of Its Temperature-Dependent Properties

Abstract

Metal chalcogenide indium selenide (In2Se3) is attracting increasing research interest for photodetector applications due to its excellent photoresponse and superior stability under ambient conditions. However, the temperature-dependent performance of In2Se3-based photodetectors has rarely been reported. Here, -In2Se3 thin films were prepared at various deposition pressure using the RF magnetron sputtering for photodetector applications. The formation of single-phase -In2Se3 films has been confirmed by the XRD and Raman analysis. Binding energies and elemental composition of -In2Se3 films were examined by XPS analysis. FE-SEM images show that the prepared -In2Se3 films were crack and pore-free, dense, compact, smooth, and have small grains. The optical energy bandgap decreases from 2.2 eV to 1.7 eV with an increase in deposition pressure. Then photoresponse of -In2Se3-based photodetectors was investigated. The photodetector fabricated with -In2Se3 at 5 Pa on ITO-coated interdigital electrode (IDE) exhibited excellent photoresponsivity (2.82 µA/W) and detectivity (7.06x10 7 Jones) with a fast rise of 0.26 s and decay time of 0.32 s. Finally, the temperature-dependent photoresponse of the photodetector fabricated with -In2Se3 at 5 Pa is meticulously investigated. We found that the photodetector properties of a photodetector critically depend on the operating temperature.

Large‐Area Growth of Ferroelectric 2D γ‐In2Se3 Semiconductor by Spray Pyrolysis for Next‐Generation Memory

“…In the Raman shift spectra shown in Figure 2c, the peaks observed at 95, 145, 208, and 243 cm −1 correspond, respectively, to the $$E_g^1$$, $$A_{1g}^1$$, $$E_g^2$$, and $$A_{1g}^2$$ phonon modes of γ‐phase In 2 Se 3 . [ 29,32 ] The Raman shift spectra as a variation of N 2 post‐annealing temperature and substrate material (Mo and SiO 2 surface) can be seen in Figure S9 (Supporting Information). It shows γ‐phase even after N 2 post‐annealing at 400 °C and also for the film on Mo surface.…”

“…Three major sharp XRD peaks are observed at 2𝜃 = 25°, 28°, and 45°, corresponding to crystal planes (110), (006), and (300) of 𝛾-phase In 2 Se 3 . [29,30] The sharp peaks with narrow widths indicate a high degree of crystallinity. The XRD spectra for the In 2 Se 3 layers with various deposition substrate temperatures, and N 2 post-annealing temperatures can be seen in Figure S8 (Supporting Information).…”