Fabrication ofn-native oxide/p-ZnTe heterojunctions by the anodic oxidation of ZnTe MBE layers

Sher, A.; Feldman, R. D.; Austin, R. F.; Opila, R. L.; Masaitis, R. L.; Zyskind, J.L.; Sulhoff, J.W.

doi:10.1007/bf02655435

Cited by 3 publications

(1 citation statement)

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“…Along with the development of growth techniques, a fast-response Schottky photodiode based on sputtered ZnO thin film was invented by the year 1986 [25]. Epitaxial technology has been applied for high-quality ZnO growth since the end of the 20th century, as in metal-organic chemical vapour deposition (MOCVD), molecular beam epitaxy (MBE), pulsed laser deposition (PLD) and so on [26][27][28]. From then on, ZnO-based UV PDs were vastly developed.…”

Section: General Properties Of Zno and Mgmentioning

confidence: 99%

Semiconductor ultraviolet photodetectors based on ZnO and Mg_xZn_1−xO

Hou

Mei²,

Du³

2014

J. Phys. D: Appl. Phys.

110

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It is indispensable to develop wide-band-gap based ultraviolet (UV) photodetectors (PDs), which are one of the basic building blocks of solid state UV optoelectronic devices. In the last two decades, we have witnessed the renaissance of ZnO as a wide-band-gap semiconductor and an enormous development of ZnO-based UV PDs as a result of its superb optical and electronic properties. Since the first demonstration, a great variety of UV PDs based on ZnO and its related materials have been proposed and demonstrated. These PDs, with diverse device geometries, exhibit either high performance or multiple functions, reflecting a state-of-the-art technology of UV optoelectronics. In this review, we study the latest progress of UV PDs made on ZnO and Mg x Zn 1−x O, which is a representative alloy of ZnO for band-gap engineering techniques. The discussion focuses on the device performance and the behind device physics according to the architecture of UV PDs.

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