Fabrications of Small and High-quality Intrinsic Josephson Junctions by Combinatorial Method of Ar-ion and Focused Ga-ion Etchings

Umegai, Shumpei; Yamaguchi, Ayami; Kakizaki, Yoshihiro; Kakehi, Daiki; Kitano, Haruhisa

doi:10.1088/1742-6596/1054/1/012030

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“…However, we did not obtain any evidence that the new method was superior to the conventional method, in terms of the switching current and the voltage jump observed in the I-V characteristics. 23) We found that the new method was similar to the FIB procedure for sample B. This suggests that the new method is easy to increase the redeposition that we observed in the TEM image near the slit part.…”

Section: Resultssupporting

confidence: 57%

Transmission electron microscopy study of focused ion beam damage in small intrinsic Josephson junctions of single crystalline Bi₂Sr₂CaCu₂O_y

Kakizaki¹,

Koyama²,

Yamaguchi³

et al. 2017

Jpn. J. Appl. Phys.

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We report a transmission electron microscopy (TEM) study on the damage produced by the focused ion beam (FIB) etching for small Bi2Sr2CaCu2Oy (Bi2212) intrinsic Josephson junctions (IJJs). The selected area diffraction patterns of TEM images demonstrate that the FIB damage causes the formation of an amorphous layer. The thickness of FIB damage is at least 30 nm for the Ga+ ion beam emitted at 50 pA and 30 kV, independent of the incident direction of the Ga+ ion beam. We also confirmed that the damage or the redeposition due to the FIB etching was effectively removed by the additional irradiation of Ar ions after the FIB etching. This suggests the advantage of the combinatorial method of the FIB and Ar-ion etchings in the successful fabrication of small and high-quality IJJs.

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Section: Resultssupporting

confidence: 57%

Transmission electron microscopy study of focused ion beam damage in small intrinsic Josephson junctions of single crystalline Bi₂Sr₂CaCu₂O_y

Kakizaki¹,

Koyama²,

Yamaguchi³

et al. 2017

Jpn. J. Appl. Phys.

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show abstract

Fabrications of Small and High-quality Intrinsic Josephson Junctions by Combinatorial Method of Ar-ion and Focused Ga-ion Etchings

Cited by 1 publication

References 10 publications

Transmission electron microscopy study of focused ion beam damage in small intrinsic Josephson junctions of single crystalline Bi₂Sr₂CaCu₂O_y

Transmission electron microscopy study of focused ion beam damage in small intrinsic Josephson junctions of single crystalline Bi₂Sr₂CaCu₂O_y

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Fabrications of Small and High-quality Intrinsic Josephson Junctions by Combinatorial Method of Ar-ion and Focused Ga-ion Etchings

Cited by 1 publication

References 10 publications

Transmission electron microscopy study of focused ion beam damage in small intrinsic Josephson junctions of single crystalline Bi2Sr2CaCu2Oy

Transmission electron microscopy study of focused ion beam damage in small intrinsic Josephson junctions of single crystalline Bi2Sr2CaCu2Oy

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Transmission electron microscopy study of focused ion beam damage in small intrinsic Josephson junctions of single crystalline Bi₂Sr₂CaCu₂O_y

Transmission electron microscopy study of focused ion beam damage in small intrinsic Josephson junctions of single crystalline Bi₂Sr₂CaCu₂O_y