1993
DOI: 10.1016/0022-0248(93)90334-s
|View full text |Cite
|
Sign up to set email alerts
|

Facet formation in silicon single crystals grown by VMFZ method

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...

Citation Types

0
1
0

Year Published

1999
1999
2012
2012

Publication Types

Select...
4
2

Relationship

0
6

Authors

Journals

citations
Cited by 10 publications
(1 citation statement)
references
References 6 publications
0
1
0
Order By: Relevance
“…The most important implication of using static magnetic fields is that sufficient damping will result in a reduction or even complete suppression of the time-dependent behavior of flows and thus weaken or eliminate dopant striations. In the field of Si-FZ growth, only few experiments have investigated the effect of axial or transverse static fields, [7][8][9][10][11][12] with inductions up to 500 mT. All of them used rf heating, where the rf induced flow is probably dominating.…”
mentioning
confidence: 99%
“…The most important implication of using static magnetic fields is that sufficient damping will result in a reduction or even complete suppression of the time-dependent behavior of flows and thus weaken or eliminate dopant striations. In the field of Si-FZ growth, only few experiments have investigated the effect of axial or transverse static fields, [7][8][9][10][11][12] with inductions up to 500 mT. All of them used rf heating, where the rf induced flow is probably dominating.…”
mentioning
confidence: 99%