1995
DOI: 10.1016/0956-7151(95)00094-c
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Faceting transformation and energy of a Σ3 grain boundary in silver

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Cited by 45 publications
(27 citation statements)
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“…For example the (100) 3CSL plane is also (111) 1 /(111) 2 . It has been demonstrated that 3 GB in Cu and Ag remains faceted up to the melting temperature T m [33][34][35]. In other words, the roughening temperature T R is higher than T m for the (100) 3CSL facet and the non-CSL 9R facet.…”
Section: Resultsmentioning
confidence: 99%
“…For example the (100) 3CSL plane is also (111) 1 /(111) 2 . It has been demonstrated that 3 GB in Cu and Ag remains faceted up to the melting temperature T m [33][34][35]. In other words, the roughening temperature T R is higher than T m for the (100) 3CSL facet and the non-CSL 9R facet.…”
Section: Resultsmentioning
confidence: 99%
“…Here, is the inclination angle between the faceted plane and the initially flat boundary. As pointed out by many investigators, [5][6][7]20,30,31) the faceting is regarded as a phase transformation of the grain boundary. According to the observation by Ference and Balluffi,12) the transformation temperature of the faceting in the Cu-Bi system is close to 450 K. This temperature is much lower than the eutectic temperature of 544 K for the Cu and Bi solid-solution phases.…”
Section: Discussionmentioning
confidence: 99%
“…A disk specimen with a diameter of 3 mm was cut from the chemically polished sheet specimen by spark erosion. The thickness of the disk specimen was further reduced to 20 mm by a conventional twin-jet electro-polishing technique at a voltage of 7 V using an etchant consisting of 20 vol% of phosphoric acid, 10 vol% of methanol and 70 vol% of distilled water with T ¼ 274{283 K. After reduction of the thickness, the disk specimen was electrochemically polished at a voltage of 6.5 V in an etchant composed of 20 vol% of nitric acid and 80 vol% of methanol with T ¼ 223 K. From the electrochemically polished specimen, a thin disk specimen was prepared by an ion milling technique using an Ar ion beam at accelerating voltages of 4-5 kV and at incident ion beam angles of [4][5][6] . The microstructure and the crystallography of the thin disk specimen were observed by transmission electron microscopy (TEM) at an accelerating voltage of 200 kV.…”
Section: Methodsmentioning
confidence: 99%
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