III–V quantum dots (QDs), in particular InP QDs,
have emerged
as high-performance and environmentally friendly candidates to replace
cadmium based QDs. InP QDs exhibit properties of direct band gap structure,
low toxicity, and high mobility, which make them suitable for high-performance
optoelectronic applications. However, it is still challenging to precisely
regulate the components and crystal structure of InP QDs, especially
in the engineered stable aliovalent doping. In this work, we developed
our original reverse cation exchange strategy to achieve Cu+ doped InP (InP:Cu) QDs at lower temperature. A ZnSe
x
S1–x
shell was
then homogeneously grown on the InP:Cu QDs as the passivation shell.
The as-prepared InP:Cu@ZnSe
x
S1–x
core–shell QDs exhibited better fluorescence
properties with a photoluminescence quantum yield (PLQY) of 56.47%.
Due to the existence of multiple luminous centers in the QDs, variable
temperature-dependent fluorescence characteristics have been studied.
The high photoluminescence characteristics in the near-infrared region
indicate their potential applications in optoelectronic devices and
biological fields.